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參數(shù)資料
| 型號： | S07G-M-08 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號、開關、功率) |
| 英文描述： | 0.7 A, 400 V, SILICON, SIGNAL DIODE, DO-219AB |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, SMF, 2 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 73K |
| 代理商： | S07G-M-08 |
www.vishay.com
2
Document Number 85191
Rev. 1.1, 20-Aug-10
S07B-M, S07D-M, S07G-M, S07J-M, S07M-M
Vishay Semiconductors
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Note:
1) Averaged over any 20 ms period
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Note:
1) Mounted on epoxy substrate with 3 mm x 3 mm CU pads (≥ 40 mm thick)
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Note:
1) Pulse test: 300 pulse width, 1 % duty cycle
Parameter
Test condition
Part
Symbol
Value
Unit
Maximum repetitive peak reverse voltage
S07B-M
VRRM
100
V
S07D-M
VRRM
200
V
S07G-M
VRRM
400
V
S07J-M
VRRM
600
V
S07M-M
VRRM
1000
V
Maximum RMS voltage
S07B-M
VRMS
70
V
S07D-M
VRMS
140
V
S07G-M
VRMS
280
V
S07J-M
VRMS
420
V
S07M-M
VRMS
700
V
Maximum DC blocking voltage
S07B-M
VDC
100
V
S07D-M
VDC
200
V
S07G-M
VDC
400
V
S07J-M
VDC
600
V
S07M-M
VDC
1000
V
Maximum average forward rectified current
Ttp = 75 °C
1)
IF(AV)
1.5
A
TA = 65 °C
1)
IF(AV)
0.7
A
Peak forward surge current 8.3 ms single
half sine-wave
TL = 25 °C
IFSM
25
A
Parameter
Test condition
Symbol
Value
Unit
Thermal resistance junction to
ambient air 1)
RthJA
180
K/W
Operating junction and storage
temperature range
TJ, TSTG
- 55 to + 150
°C
Parameter
Test condition
Symbol
Min.
Typ.
Max.
Unit
Maximum instantaneous
forward voltage
1 A 1)
VF
1.1
V
Maximum DC reverse current at
rated DC blocking voltage
TA = 25 °C
IR
10
μA
TA = 125 °C
IR
50
μA
Reverse recovery time
IF = 0.5 A, IR = 1 A, Irr = 0.25 A
trr
1.8
μs
Typical capacitance at 4 V, MHz
Cj
4pF
相關PDF資料 |
PDF描述 |
|---|---|
| S07M-M-08 | 0.7 A, 1000 V, SILICON, SIGNAL DIODE, DO-219AB |
| S10A-TP | 10 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AB |
| S10B-TP | 10 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AB |
| S10D-TP | 10 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AB |
| S10A10FR | 10 A, SILICON, BRIDGE RECTIFIER DIODE |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| S07GSD | 制造商:CHENDA 制造商全稱:Chendahang Electronics Co., Ltd 功能描述:SU RFACE MOUNT GENERAL PURPOSE SILICON RECTIFIER |
| S07J | 制造商:Vishay Semiconductors 功能描述:DIODE SMALL SIGNAL V DO-219 制造商:Vishay Semiconductors 功能描述:DIODE, SMALL SIGNAL, V, DO-219 |
| S07J/2G | 制造商:Vishay Angstrohm 功能描述:Diode Small Signal Switching 600V 1.5A 2-Pin DO-219AB T/R |
| S07J-GS08 | 功能描述:二極管 - 通用，功率，開關 600 Volt 0.7 Amp RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| S07J-GS18 | 功能描述:二極管 - 通用，功率，開關 0.7 Amp 600 Volt 1.8uS RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
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