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參數(shù)資料
| 型號： | 935209060112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 門電路 |
| 英文描述： | LVT SERIES, TRIPLE 3-INPUT NAND GATE, PDSO14 |
| 封裝： | 5.30 MM, PLASTIC, MO-150, SOT-337-1, SSOP-14 |
| 文件頁數(shù)： | 5/10頁 |
| 文件大?。?/td> | 79K |
| 代理商： | 935209060112 |
Philips Semiconductors
Product specification
74LVT10
3.3V Triple 3-input NAND gate
1996 May 10
4
DC ELECTRICAL CHARACTERISTICS
Over recommended operating conditions
Voltages are referenced to GND (ground = 0V)
LIMITS
SYMBOL
PARAMETER
TEST CONDITIONS
Temp = -40
°C to +85°C
UNIT
MIN
TYP1
MAX
VIK
Input clamp voltage
VCC = 2.7V; IIK = –18mA
–1.2
V
VCC = 2.7 to 3.6V; IOH = –100A
VCC–0.2
VCC
VOH
High-level output voltage
VCC = 2.7V; IOH = –6mA
2.4
2.5
V
VCC = 3.0V; IOH = –20mA
2.0
2.3
VCC = 2.7V; IOL = 100A
0.05
0.2
VOL
Low-level output voltage
VCC = 2.7V; IOL = 24mA
0.3
0.5
V
VCC = 3.0V; IOL = 32mA
0.35
0.5
I
Input leakage current
VCC = 0 or 3.6V; VI = 5.5V
0.1
10
A
II
Input leakage current
VCC = 3.6V; VI = VCC or GND
0.01
±1
A
IOFF
Output off current
VCC = 0V; VI or VO = 0 to 4.5V
1
±100
A
ICCH
Quiescent supply current
VCC = 3.6V; Outputs High, VI = GND or
VCC, IO = 0
0.001
0.02
mA
ICCL
Quiescent supply current
VCC = 3.6V; Outputs Low, VI = GND or VCC,
IO = 0
1
2
mA
ICC
Additional supply current per input pin2
VCC = 3V to 3.6V; One input at VCC–0.6V,
Other inputs at VCC or GND
0.1
0.2
mA
CI
Input capacitance
VI = 3V or 0
2
pF
NOTES:
1. All typical values are at VCC = 3.3V and Tamb = 25°C.
2. This is the increase in supply current for each input at the specificed voltage level other than VCC or GND.
AC CHARACTERISTICS
GND = 0V; tR = tF = 2.5ns; CL = 50pF, RL = 500; Tamb = –40°C to +85°C.
LIMITS
SYMBOL
PARAMETER
WAVEFORM
VCC = 3.3V ± 0.3V
VCC = 2.7V
UNIT
MIN
TYP1
MAX
tPLH
tPHL
Propagation delay
An, Bn, Cn to Yn
1
1.0
3.8
3.3
5.2
4.4
6.2
4.4
ns
NOTE:
1. All typical values are at VCC = 3.3V and Tamb = 25°C.
AC WAVEFORMS
VM = 1.5V, VIN = GND to 2.7V
VM
Qn
Dna, Dnb, Dnc
tPHL
tPLH
SF00064
Waveform 1.
Propagation Delay for Inverting Outputs
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