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參數(shù)資料
| 型號(hào)： | PVD3354NS |
| 元件分類： | 固態(tài)繼電器 |
| 英文描述： | 8MHZ, TQFP, IND TEMP, GREEN(MCU AVR) |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 303K |
| 代理商： | PVD3354NS |
PD 1.025D
Series PVD33
Microelectronic
Power IC Relay
Single-Pole, 220mA, 0-300V DC
BOSFET
Photovoltaic Relay
General Description
The Photovoltaic DC Relay (PVD) is a single-pole, nor-
mally open solid state replacement for electro-me-
chanical relays used for general purpose switching of
analog signals. It utilizes as an output switch a unique
bidirectional (AC or DC) MOSFET power IC termed a
BOSFET. The BOSFET is controlled by a photovoltaic
generator of novel construction, which is energized by
radiation from a dielectrically isolated light emitting di-
ode (LED).
The PVD overcomes the limitations of both conven-
tional and reed electromechanical relays by offering
the solid state advantages of long life, high operating
speed, low pick-up power, bounce-free operation, low
thermal voltages and miniaturization. These advan-
tages allow product improvement and design innova-
tions in many applications such as process control,
multiplexing, telecommunications, automatic test
equipment and data acquisition.
The PVD can switch analog signals from thermocouple
level to 300 volts peak DC. Signal frequencies into the
RF range are easily controlled and switching rates up
to 6kHz are achievable. The extremely small thermally
generated offset voltages allow increased measure-
ment accuracies.
Unique silicon technology developed by International
Rectifier forms the heart of the PVD. The monolithic
BOSFET contains a bidirectional N-channel power
MOSFET output structure. In addition, this power IC
chip has input circuitry for fast turn-off and gate protec-
tion functions. This section of the BOSFET chip utilizes
both bipolar and MOS technology to form NPN transis-
tors, P-channel MOSFETs, resistors, diodes and ca-
pacitors.
The photovoltaic generator similarly utilizes a unique
International Rectifier alloyed multijunction structure.
The excellent current conversion efficiency of this tech-
nique results in the very fast response of the PVD mi-
croelectronic power IC relay.
This advanced semiconductor technology has created
a radically new control device. Designers can now de-
velop switching systems to new standards of electrical
performance and mechanical compactness.
PVD33 Features
BOSFET Power IC
I
10
10
Operations
100μsec Operating Time
3 milliwatts Pick-Up Power
1000V/μsec dv/dt
Bounce-Free
8-pin DIP Package
-40°C to 85°C
UL recognized
I
I
I
I
I
I
I
I
Part Identification
Part Number
Operating
Voltage (DC)
200V
Sensitivity
Off-State
Resistance
10
8
Ohms
PVD2352
5 mA
PVD3354
300V
10
10
Ohms
(BOSFET is a trademark of International Rectifier)
Next Data Sheet
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PVD3354 | Photovoltaic Relay Microelectronic Power IC Relay Single-Pole, 220mA, 0-300V DC |
| PVD33 | Photovoltaic Relay Microelectronic Power IC Relay Single-Pole, 220mA, 0-300V DC |
| PVDZ172NSPbF | Microelectronic Power IC HEXFET Power MOSFET Photovoltaic Relay Single Pole, Normally Open 0-60V DC, 1.5A |
| PVDZ172NS | 8MHZ, TQFP, IND TEMP, GREEN, 1.8V(MCU AVR) |
| PVG190602A | Liquid Crystal Displays |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PVD3481212 | 制造商:TDK-Lambda Corporation 功能描述:DC/DC PS DUAL-OUT 12V/-12V 0.125A 3W 11SIP - Bulk |
| PVD3-48-1212 | 功能描述:DC/DC轉(zhuǎn)換器 3W 12V 0.125A RoHS:否 制造商:Murata 產(chǎn)品: 輸出功率: 輸入電壓范圍:3.6 V to 5.5 V 輸入電壓（標(biāo)稱）: 輸出端數(shù)量:1 輸出電壓（通道 1）:3.3 V 輸出電流（通道 1）:600 mA 輸出電壓（通道 2）: 輸出電流（通道 2）: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體尺寸: |
| PVD351212 | 制造商:TDK-Lambda Corporation 功能描述:DC/DC PS DUAL-OUT 12V/-12V 0.125A 3W 11SIP - Bulk |
| PVD3-5-1212 | 功能描述:DC/DC轉(zhuǎn)換器 3W 12V 0.125A RoHS:否 制造商:Murata 產(chǎn)品: 輸出功率: 輸入電壓范圍:3.6 V to 5.5 V 輸入電壓（標(biāo)稱）: 輸出端數(shù)量:1 輸出電壓（通道 1）:3.3 V 輸出電流（通道 1）:600 mA 輸出電壓（通道 2）: 輸出電流（通道 2）: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體尺寸: |
| PVD-3610 | 制造商:PMI 制造商全稱:PMI 功能描述:SHROUDED SPLIT BOBBIN HIGH ISOLATION POWER TRANSFORMERS |
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