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參數(shù)資料
| 型號(hào)： | PVD1054 |
| 廠商： | International Rectifier |
| 英文描述： | Microelectronic Power IC BOSFET Photovoltaic Relay Single-Pole, 160mA, 0-100V DC |
| 中文描述： | 微電子功率IC BOSFET光電繼電器單刀一百六十毫安，0 - 100V的直流 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 79K |
| 代理商： | PVD1054 |
Data Sheet No. PD10023E
Series PVD10
Microelectronic Power IC
BOSFET
Photovoltaic Relay
Single-Pole, 160mA, 0-100V DC
General Description
The Photovoltaic DC Relay (PVD) is a single-pole,
normally open solid state replacement for electro-
mechanical relays used for general purpose switch-
ing of analog signals. It utilizes as an output switch a
unique bidirectional (AC or DC) MOSFET power IC
termed a BOSFET. The BOSFET is controlled by a
photovoltaic generator of novel construction, which
is energized by radiation from a dielectrically iso-
lated light emitting diode (LED).
The PVD overcomes the limitations of both conven-
tional and reed electromechanical relays by offering
the solid state advantages of long life, high operat-
ing speed, low pick-up power, bounce-free opera-
tion, low thermal voltages and miniaturization. These
advantages allow product improvement and design
innovations in many applications such as process
control, multiplexing, telecommunications, automatic
test equipment and data acquisition.
The PVD can switch analog signals from thermo-
couple level to 100 volts peak DC. Signal frequen-
cies into the RF range are easily controlled and
switching rates up to 18kHz are achievable. The
extremely small thermally generated offset voltages
allow increased measurement accuracies.
Unique silicon technology developed by International
Rectifier forms the heart of the PVD. The monolithic
BOSFET contains a bidirectional N-channel power
MOSFET output structure. In addition, this power IC
chip has input circuitry for fast turn-off and gate
protection functions. This section of the BOSFET chip
utilizes both bipolar and MOS technology to form
NPN transistors, P-channel MOSFETs, resistors,
diodes and capacitors.
The photovoltaic generator similarly utilizes a unique
International Rectifier alloyed multijunction structure.
The excellent current conversion efficiency of this
technique results in the very fast response of the
PVD microelectronic power IC relay.
This advanced semiconductor technology has cre-
ated a radically new control device. Designers can
now develop switching systems to new standards of
electrical performance and mechanical compactness.
Features
BOSFET Power IC
I
10
10
Operations
I
25μsec Operating Time
I
3 milliwatts Pick-Up Power
I
1000V/μsec dv/dt
I
Bounce-Free
I
8-pin DIP Package
I
-40°C to 85°C
I
UL recognized
I
Part Identification
Part Number
Operating
Voltage (DC)
Sensitivity
Off-State
Resistance
10
8
Ohms
PVD1052
0 – 100V
5 mA
PVD1054
10
10
Ohms
(BOSFET is a trademark of International Rectifier)
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