產(chǎn)品概述
The IRS21850SPBF is a high voltage high speed power MOSFET and IGBT single High-side Gate Driver IC with propagation delay matched output channels. Proprietary HVIC and latch immune CMOS technology enables ruggedized monolithic construction. The floating logic input is compatible with standard CMOS or LSTTL output and down to 3.3V logic and can be operated up to 600V above the ground. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive a N-channel power MOSFET or IGBT in the high-side configuration, which operates up to 600V.
Under-voltage lockout for VBS and VCC
Tolerant to negative transient voltage
Matched propagation delays for all channels
3.3 and 5V Input logic compatible
應(yīng)用
工業(yè)
產(chǎn)品信息
驅(qū)動(dòng)配置: 高壓側(cè) 輸出電流峰值: 4A 電源電壓最小值: 10V 電源電壓最大值: 20V 驅(qū)動(dòng)器封裝類型: SOIC 針腳數(shù): 8引腳 輸入延遲: 160ns 輸出延遲: 160ns 工作溫度最小值: -40°C 工作溫度最高值: 125°C 產(chǎn)品范圍: - 汽車質(zhì)量標(biāo)準(zhǔn): - MSL: MSL 2 - 1年