產(chǎn)品概述
The IPB107N20N3 G is a 200V N-channel Power MOSFET ideally suited for high-frequency switching, achieving excellent performance in applICations such as synchronous rectification for AC-DC SMPS and motor control. The OptiMOS? MOSFET is optimized for hard commutation ruggedness, achieving low Qrr and lower peak reverse recovery charges. It is performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems, DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives.
Highest efficiency
Highest power density
Lowest board space consumption
Minimal device paralleling required
System cost improvement
Environmentally-friendly
Easy to design in
應(yīng)用
產(chǎn)品信息
晶體管極性: N溝道 電流, Id 連續(xù): 88A 漏源電壓, Vds: 200V 在電阻RDS(上): 0.0096ohm 電壓 @ Rds測量: 10V 閾值電壓 Vgs: 3V 功耗 Pd: 300W 晶體管封裝類型: TO-263 針腳數(shù): 3引腳 工作溫度最高值: 175°C 產(chǎn)品范圍: - 汽車質(zhì)量標(biāo)準(zhǔn): - MSL: MSL 1 -無限制