Features Features Features Features Features
? UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
? Generation 4 IGBT design provides tighter
parameter distribution and higher effICiency than
Generation 3
? Industry standard TO-247AC package
? Generation 4 IGBTs offer highest efficiency available
? IGBTs optimized for specified application conditions
? Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
Benefits
Parameter Max. Units
VCES Collector-to-Emitter Breakdown Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 23
IC @ TC = 100°C Continuous Collector Current 12 A
ICM Pulsed Collector Current 92
ILM Clamped Inductive Load Current 92
VGE Gate-to-Emitter Voltage ± 20 V
EARV Reverse Voltage Avalanche Energy 10 mJ
PD @ TC = 25°C Maximum Power Dissipation 100
PD @ TC = 100°C Maximum Power Dissipation 42
TJ Operating Junction and -55 to + 150
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )
°C
Mounting torque, 6-32 or M3 screw. 10 lbf?in (1.1N?m)
Absolute Maximum Ratings
W
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 1.2
RθCS Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
RθJA Junction-to-Ambient, typical socket mount ––– 40
Wt Weight 6 (0.21) ––– g (oz)
Thermal Resistance
