參數(shù)資料
型號： PM100RLA120
廠商： Mitsubishi Electric Corporation
英文描述： INTELLIGENT POWER MODULES FLAT-BASE TYPE INSULATED PACKAGE
中文描述： 智能功率模塊扁平性基地型絕緣包裝
文件頁數(shù)： 3/6頁
文件大?。?/td> 127K
代理商： PM100RLA120
MITSUBISHI <INTELLIGENT POWER MODULES>
PM100RLA120
FLAT-BASE TYPE
INSULATED PACKAGE
Jan. 2005
Parameter
Symbol
Supply Voltage Protected by
SC
Supply Voltage (Surge)
Module Case Operating
Temperature
Storage Temperature
Isolation Voltage
Condition
V
CC(surge)
T
C
T
stg
V
iso
Ratings
V
CC(PROT)
800
1000
–
20 ~ +100
–
40 ~ +125
2500
Unit
V
°
C
°
C
V
rms
V
V
D
= 13.5 ~ 16.5V, Inverter Part,
T
j
= +125
°
C Start
Applied between : P-N, Surge value
(Note-1)
60Hz, Sinusoidal, Charged part to Base, AC 1 min.
(Note-1) Tc (base plate) measurement point is below.
TOTAL SYSTEM
2.3
2.4
3.5
2.5
0.8
1.0
3.0
1.2
1
10
Min.
—
—
—
0.5
—
—
—
—
—
—
Typ.
1.8
1.9
2.5
1.0
0.5
0.4
2.0
0.7
—
—
Max.
Collector-Emitter
Saturation Voltage
FWDi Forward Voltage
Collector-Emitter
Cutoff Current
–
I
C
= 100A, V
D
= 15V, V
CIN
= 15V
(Fig. 2)
T
j
= 25
°
C
T
j
= 125
°
C
ELECTRICAL CHARACTERISTICS
(Tj = 25
°
C, unless otherwise noted)
INVERTER PART
Parameter
Symbol
Condition
V
CE(sat)
I
CES
V
EC
t
on
t
rr
t
c(on)
t
off
t
c(off)
Limits
T
j
= 25
°
C
T
j
= 125
°
C
Switching Time
V
D
= 15V, V
CIN
= 0V
15V
V
CC
= 600V, I
C
= 100A
T
j
= 125
°
C
Inductive Load
(Fig. 3, 4)
V
CE
= V
CES
, V
CIN
= 15V
(Fig. 5)
V
D
= 15V, I
C
= 100A
V
CIN
= 0V
(Fig. 1)
V
mA
V
μ
s
Unit
P
N
U
V
W
B
Top view
Tc
Bottom view
Y
X
0.16*
0.26*
0.26*
0.40*
0.21
0.34
0.34
0.52
0.023
°
C/W
R
th(j-c)Q
R
th(j-c)F
R
th(j-c)Q
R
th(j-c)F
R
th(j-c)Q
R
th(j-c)F
R
th(j-c)Q
R
th(j-c)F
R
th(c-f)
Inverter IGBT (per 1 element)
Inverter FWDi (per 1 element)
Brake IGBT
Brake FWDi
Inverter IGBT (per 1 element)
Inverter FWDi (per 1 element)
Brake IGBT
Brake FWDi
Case to fin, (per 1 module)
Thermal grease applied
(Note-2)
(Note-2)
(Note-2)
(Note-2)
(Note-1)
(Note-1)
(Note-1)
(Note-1)
(Note-2)
Symbol
Condition
Unit
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Junction to case Thermal
Resistances
THERMAL RESISTANCES
Contact Thermal Resistance
Parameter
Limits
Typ.
Max.
* If you use this value, R
th(f-a)
should be measured just under the chips.
(Note-2) Tc (under the chip) measurement point is below.
arm
axis
X
Y
Unit : mm
Br
IGBT
10.8
26.9
UP
IGBT
23.7
56.7
VP
WP
UN
WN
FWDi
23.0
43.4
IGBT
57.2
56.7
FWDi
56.5
43.4
IGBT
87.7
56.7
FWDi
86.5
43.4
IGBT
37.7
28.7
FWDi
38.0
42.0
IGBT
100.7
28.7
FWDi
101.5
42.0
VN
IGBT
70.2
28.7
FWDi
71.5
42.0
FWDi
7.2
60.6
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