參數(shù)資料
型號： PM100CLA120
廠商： Mitsubishi Electric Corporation
英文描述： FLAT-BASE TYPE INSULATED PACKAGE
中文描述： 平性基地型絕緣包裝
文件頁數(shù)： 3/8頁
文件大?。?/td> 137K
代理商： PM100CLA120
MITSUBISHI <INTELLIGENT POWER MODULES>
PM100CLA120
FLAT-BASE TYPE
INSULATED PACKAGE
May 2005
2.3
2.4
3.5
2.5
0.8
1.0
3.0
1.2
1
10
Min.
—
—
—
0.5
—
—
—
—
—
—
Typ.
1.8
1.9
2.5
1.0
0.5
0.4
2.0
0.7
—
—
Max.
Collector-Emitter
Saturation Voltage
FWDi Forward Voltage
Collector-Emitter
Cutoff Current
–
I
C
= 100A, V
D
= 15V, V
CIN
= 15V
(Fig. 2)
T
j
= 25
°
C
T
j
= 125
°
C
ELECTRICAL CHARACTERISTICS
(Tj = 25
°
C, unless otherwise noted)
INVERTER PART
Parameter
Symbol
Condition
V
CE(sat)
I
CES
V
EC
t
on
t
rr
t
c(on)
t
off
t
c(off)
Limits
T
j
= 25
°
C
T
j
= 125
°
C
Switching Time
V
D
= 15V, V
CIN
= 0V
15V
V
CC
= 600V, I
C
= 100A
T
j
= 125
°
C
Inductive Load
(Fig. 3, 4)
V
CE
= V
CES
, V
CIN
= 15V
(Fig. 5)
V
D
= 15V, I
C
= 100A
V
CIN
= 0V
(Fig. 1)
V
mA
V
μ
s
Unit
Bottom view
Y
X
* If you use this value, R
th(f-a)
should be measured just under the chips.
(Note-1) T
C
(under the chip) measurement point is below.
UP
IGBT
23.7
56.7
VP
WP
UN
VN
WN
FWDi
23.0
43.4
IGBT
57.2
56.7
FWDi
56.5
43.4
IGBT
87.7
56.7
FWDi
86.5
43.4
IGBT
37.7
28.7
FWDi
38.0
42.0
IGBT
70.2
28.7
FWDi
71.5
42.0
IGBT
100.7
28.7
FWDi
101.5
42.0
arm
axis
X
Y
(Unit : mm)
Parameter
Symbol
Supply Voltage Protected by
SC
Supply Voltage (Surge)
Storage Temperature
Isolation Voltage
Condition
V
CC(surge)
T
stg
V
iso
Ratings
V
CC(PROT)
800
1000
–
40 ~ +125
2500
Unit
V
°
C
V
rms
V
V
D
= 13.5 ~ 16.5V, Inverter Part,
T
j
= +125
°
C Start
Applied between : P-N, Surge value
60Hz, Sinusoidal, Charged part to Base, AC 1 min.
TOTAL SYSTEM
0.16*
0.26*
0.023
°
C/W
R
th(j-c)Q
R
th(j-c)F
R
th(c-f)
Inverter IGBT (per 1 element)
Inverter FWDi (per 1 element)
Case to fin, (per 1 module)
Thermal grease applied
(Note-1)
(Note-1)
(Note-1)
Symbol
Condition
Unit
Min.
—
—
—
—
—
—
Junction to case Thermal
Resistances
THERMAL RESISTANCES
Contact Thermal Resistance
Parameter
Limits
Typ.
Max.
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