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參數(shù)資料
| 型號(hào)： | PJSD15W |
| 元件分類(lèi)： | 參考電壓二極管 |
| 英文描述： | 350 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| 文件頁(yè)數(shù)： | 3/5頁(yè) |
| 文件大小： | 99K |
| 代理商： | PJSD15W |
PAGE . 3
August 12.2010-Rev.00
PJSD03W~PJSD36W
PJSD24W Marking 24W
Parameter
Symbol
Conditions
Min.
Typical
Max.
Units
Reverse Stand-Off Voltage
V
RWM
--
-
24
V
Reverse Breakdown Voltage
V
BR
I
BR=1mA
26.6
-
30
V
Reverse Leakage Current
I
R
V
R=24V
--1
μA
Clamping Voltage(8/20
μs)
V
C
I
PP=1A
-
43
V
Off State Junction Capacitance
C
J
0Vdc Bias=f=1MHz
-
80
-
pF
Off State Junction Capacitance
C
J
5Vdc Bias=f=1MHz
-
10
-
pF
PJSD36W Marking 36W
Parameter
Symbol
Conditions
Min.
Typical
Max.
Units
Reverse Stand-Off Voltage
V
RWM
--
-
36
V
Reverse Breakdown Voltage
V
BR
I
BR=1mA
39.9
-
45
V
Reverse Leakage Current
I
R
V
R=36V
--1
μA
Clamping Voltage(8/20
μs)
V
C
I
PP=1A
-
60
V
Off State Junction Capacitance
C
J
0Vdc Bias=f=1MHz
-
30
-
pF
Off State Junction Capacitance
C
J
5Vdc Bias=f=1MHz
-
1
-
pF
PJSD15W Marking 15W
Parameter
Symbol
Conditions
Min.
Typical
Max.
Units
Reverse Stand-Off Voltage
V
RWM
--
-
15
V
Reverse Breakdown Voltage
V
BR
I
BR=1mA
16.7
-
20
V
Reverse Leakage Current
I
R
V
R=15V
--1
μA
Clamping Voltage(8/20
μs)
V
C
I
PP=1A
-
24
V
Off State Junction Capacitance
C
J
0Vdc Bias=f=1MHz
-
120
-
pF
Off State Junction Capacitance
C
J
5Vdc Bias=f=1MHz
-
30
-
pF
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相關(guān)代理商/技術(shù)參數(shù) |
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