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參數(shù)資料
| 型號： | PJSD15W |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 350 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 99K |
| 代理商： | PJSD15W |
PAGE . 2
August 12.2010-Rev.00
PJSD03W~PJSD36W
PJSD05W Marking 05W
Parameter
Symbol
Conditions
Min.
Typical
Max.
Units
Reverse Stand-Off Voltage
V
RWM
--
-
5
V
Reverse Breakdown Voltage
V
BR
I
BR=1mA
6
-
7.2
V
Reverse Leakage Current
I
R
V
R=5V
-
10
μA
Clamping Voltage(8/20
μs)
V
C
I
PP=1A
-
9.8
V
Off State Junction Capacitance
C
J
0Vdc Bias=f=1MHz
-
300
-
pF
Off State Junction Capacitance
C
J
5Vdc Bias=f=1MHz
-
100
-
pF
PJSD12W Marking 12W
Parameter
Symbol
Conditions
Min.
Typical
Max.
Units
Reverse Stand-Off Voltage
V
RWM
--
-
12
V
Reverse Breakdown Voltage
V
BR
I
BR=1mA
13.3
-
15
V
Reverse Leakage Current
I
R
V
R=12V
--1
μA
Clamping Voltage(8/20
μs)
V
C
I
PP=1A
-
19
V
Off State Junction Capacitance
C
J
0Vdc Bias=f=1MHz
-
130
-
pF
Off State Junction Capacitance
C
J
5Vdc Bias=f=1MHz
-
50
-
pF
PJSD08W Marking 08W
Parameter
Symbol
Conditions
Min.
Typical
Max.
Units
Reverse Stand-Off Voltage
V
RWM
--
-
8
V
Reverse Breakdown Voltage
V
BR
I
BR=1mA
8.5
-
10
V
Reverse Leakage Current
I
R
V
R=8V
-
10
μA
Clamping Voltage(8/20
μs)
V
C
I
PP=1A
-
13.4
V
Off State Junction Capacitance
C
J
0Vdc Bias=f=1MHz
-
150
-
pF
Off State Junction Capacitance
C
J
5Vdc Bias=f=1MHz
-
80
-
pF
PJSD03W Marking 03W
Parameter
Symbol
Conditions
Min.
Typical
Max.
Units
Reverse Stand-Off Voltage
V
RWM
--
-
3.0
V
Reverse Breakdown Voltage
V
BR
I
BR=1mA
4
-
5.0
V
Reverse Leakage Current
I
R
V
R=3.0V
-
125
μA
Clamping Voltage(8/20
μs)
V
C
I
PP=1A
-
6.5
V
Off State Junction Capacitance
C
J
0Vdc Bias=f=1MHz
-
450
-
pF
Off State Junction Capacitance
C
J
5Vdc Bias=f=1MHz
-
150
-
pF
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