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參數(shù)資料
| 型號： | NTP45N06D |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET 45 Amps, 60 Volts |
| 中文描述： | 功率MOSFET四十五安培，60伏特 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 64K |
| 代理商： | NTP45N06D |
NTP45N06, NTB45N06
http://onsemi.com
4
GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE
(VOLTS)
Figure 7. Capacitance Variation
C
Qg, TOTAL GATE CHARGE (nC)
V
RG, GATE RESISTANCE (
)
VSD, SOURCE–TO–DRAIN VOLTAGE (VOLTS)
I
t
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
TJ, STARTING JUNCTION TEMPERATURE (
°
C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
I
E
A
1000
100
10
1
0.1
1000
100
1
12
10
8
6
4
2
0
280
240
200
160
120
80
40
0
50
40
30
20
10
0
0.6
10
3600
3200
10
2800
2400
15
5
0
20
2000
1600
1200
800
0
5
Figure 8. Gate–to–Source and
Drain–to–Source Voltage vs. Total Charge
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
25
0
16
20
12
8
24
4
1
10
100
0.76 0.8
0.72
0.68
0.92
0.64
1.04
0.10
10
100
1
25
125
150
100
75
175
50
400
0.84 0.88
0.96
10
28
32
36
1
ID = 45
TJ = 25
°
C
VGS
VGS = 0 V
VDS = 0 V
TJ = 25
°
C
Crss
Ciss
Coss
Crss
Ciss
VGS = 20 V
SINGLE PULSE
TC = 25
°
C
VDS = 30 V
ID = 45 A
VGS = 10 V
VGS = 0 V
TJ = 25
°
C
ID = 45 A
tr
td(off)
td(on)
tf
RDS(on) Limit
Thermal Limit
Package Limit
QT
Q2
Q1
10 ms
1 ms
100
μ
s
dc
VGS
VDS
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|---|---|
| NTP45N06G | 功能描述:MOSFET 60V 45A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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