參數(shù)資料
型號(hào)： NTP45N06
廠商： ON SEMICONDUCTOR
元件分類： JFETs
英文描述： Power MOSFET 45 Amps, 60 Volts
中文描述： 45 A, 60 V, 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： CASE 221A-09, 3 PIN
文件頁數(shù)： 2/8頁
文件大?。?/td> 64K
代理商： NTP45N06
NTP45N06, NTB45N06
http://onsemi.com
2
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Thermal Resistance
– Junction–to–Case
– Junction–to–Ambient (Note 3.)
– Junction–to–Ambient (Note 4.)
R
θ
JC
R
θ
JA
R
θ
JA
TL
1.2
46.8
63.2
°
C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″
from case for 10 seconds
260
°
C
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage (Note 5.)
(VGS = 0 Vdc, ID = 250
μ
Adc)
Temperature Coefficient (Positive)
V(BR)DSS
60
–
70
57
–
–
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150
°
C)
Gate–Body Leakage Current (VGS =
±
20
Vdc, VDS = 0 Vdc)
IDSS
–
–
–
–
1.0
10
μ
Adc
IGSS
–
–
±
100
nAdc
ON CHARACTERISTICS
(Note 5.)
Gate Threshold Voltage (Note 5.)
(VDS = VGS, ID = 250
μ
Adc)
Threshold Temperature Coefficient (Negative)
VGS(th)
2.0
–
2.8
7.2
4.0
–
Vdc
mV/
°
C
Static Drain–to–Source On–Resistance (Note 5.)
(VGS = 10 Vdc, ID = 22.5 Adc)
RDS(on)
–
21
26
mOhm
Static Drain–to–Source On–Voltage (Note 5.)
(VGS = 10 Vdc, ID = 45 Adc)
(VGS = 10 Vdc, ID = 22.5 Adc, TJ = 150
°
C)
VDS(on)
–
–
0.93
0.93
1.4
–
Vdc
Forward Transconductance (Note 5.) (VDS = 8.0 Vdc, ID = 12 Adc)
gFS
–
16.6
–
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
Coss
Crss
–
1224
1725
pF
Output Capacitance
–
345
485
Transfer Capacitance
–
76
160
SWITCHING CHARACTERISTICS
(Note 6.)
Turn–On Delay Time
td(on)
tr
td(off)
tf
QT
–
10
25
ns
Rise Time
(VDD = 30 Vdc, ID = 45 Adc,
(VDD 30 Vdc, ID 45 Adc,
VGS = 10 Vdc, RG = 9.1
) (Note 5.)
–
101
200
Turn–Off Delay Time
–
33
70
Fall Time
–
106
220
Gate Charge
(VDS = 48 Vdc, ID = 45 Adc,
VGS = 10 Vdc) (Note 5.)
–
33
46
nC
Q1
Q2
–
6.4
–
–
15
–
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 45 Adc, VGS = 0 Vdc) (Note 5.)
(IS = 45 Adc, VGS = 0 Vdc, TJ = 150
°
C)
VSD
–
–
1.08
0.93
1.2
–
Vdc
Reverse Recovery Time
(IS = 45 Ad
dIS/dt = 100 A/
μ
s) (Note 5.)
V
0 Vd
trr
ta
tb
–
53.1
–
ns
–
36
–
–
16.9
–
Reverse Recovery Stored Charge
3. When surface mounted to an FR4 board using 1
″
pad size, (Cu Area 1.127 in2).
4. When surface mounted to an FR4 board using the minimum recommended pad size, (Cu Area 0.412 in2).
5. Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
6. Switching characteristics are independent of operating junction temperatures.
QRR
–
0.087
–
μ
C
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