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參數(shù)資料
| 型號： | NTP125N02R |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET 125 A, 24 V N-Channel TO-220, D2PAK |
| 中文描述： | 95 A, 25 V, 0.0062 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | CASE 221A-09, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 68K |
| 代理商： | NTP125N02R |
NTB125N02R, NTP125N02R
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
J
= 25
°
C Unless otherwise specified)
Characteristics
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage (Note 3)
(V
= 0 V
, I
= 250 A
)
Temperature Coefficient (Positive)
V
(BR)DSS
25
28
15
V
dc
mV/
°
C
Zero Gate Voltage Drain Current
(V
DS
= 20 V
dc
, V
GS
= 0 V
dc
)
(V
DS
= 20 V
dc
, V
GS
= 0 V
dc
, T
J
= 125
°
C)
I
DSS
1.5
10
A
dc
GateBody Leakage Current
(V
GS
=
±
20 V
dc
, V
DS
= 0 V
dc
)
I
GSS
±
100
nA
dc
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage (Note 3)
(V
= V
, I
= 250 A
)
Threshold Temperature Coefficient (Negative)
V
GS(th)
1.0
1.5
5.0
2.0
V
dc
mV/
°
C
Static DraintoSource OnResistance (Note 3)
(V
GS
= 10 V
dc
, I
D
= 110 A
dc
)
(V
GS
= 4.5 V
dc
, I
D
= 55 A
dc
)
(V
GS
= 10 V
dc
, I
D
= 20 A
dc
)
(V
GS
= 4.5 V
dc
, I
D
= 20 A
dc
)
R
DS(on)
3.7
4.9
3.7
4.7
4.6
6.2
m
Forward Transconductance (Note 3)
(V
DS
= 10 V
dc
, I
D
= 15 A
dc
)
g
FS
44
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
2710
3440
pF
Output Capacitance
(V
= 20 V
, V
= 0 V, f = 1 MHz)
DS
GS
C
oss
1105
1670
Transfer Capacitance
dc
C
rss
227
640
SWITCHING CHARACTERISTICS
(Note 4)
TurnOn Delay Time
t
d(on)
11
22
ns
Rise Time
(V
GS
= 10 V
dc
, V
DD
= 10 V
dc
,
I
D
= 40 A
dc
, R
G
= 3
t
r
39
80
TurnOff Delay Time
)
t
d(off)
27
40
Fall Time
tf
21
40
Gate Charge
Q
T
23.6
28
nC
(V
GS
= 4.5 V
dc
, I
= 40 A
dc
,
DS
= 10 V
dc
) (Note 3)
Q
1
5.1
Q
2
11
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage
(I
S
= 20 A
, V
GS
= 0 V
) (Note 3)
(I
= 55 A
, V
= 0 V
)
S
= 20 A
dc
, V
GS
= 0 V
dc
, T
J
= 125
V
SD
0.82
0.99
0 65
0.65
1.2
V
dc
(I
°
C)
(
dc
,
)
Reverse Recovery Time
t
rr
36.5
ns
(I
S
= 30 A
, V
= 0 V
,
dI
S
/dt = 100 A/ s) (Note 3)
t
a
17.7
t
b
18.8
Reverse Recovery Stored Charge
Q
RR
0.024
C
3. Pulse Test: Pulse Width
4. Switching characteristics are independent of operating junction temperatures.
300 s, Duty Cycle
2%.
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