參數(shù)資料
型號(hào)： NTE4151P
廠商： ON SEMICONDUCTOR
英文描述： Small Signal MOSFET( -20V，-760mA，功率MOSFET)
中文描述： 小信號(hào)MOSFET（- 20V的，-七六零毫安，功率MOSFET的）
文件頁數(shù)： 2/6頁
文件大小： 65K
代理商： NTE4151P
NTA4151P, NTE4151P
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise stated)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 A
20
V
Zero Gate Voltage Drain Current
I
DSS
V
GS
= 0 V, V
DS
= 16 V
1.0
100
nA
GatetoSource Leakage Current
I
GSS
V
DS
= 0 V, V
GS
=
±
4.5
V
1.0
10
A
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= 250 A
0.45
V
DraintoSource On Resistance
R
DS(on)
V
GS
= 4.5
V, I
D
= 350 mA
0.26
0.36
V
GS
= 2.5
V, I
D
= 300 mA
0.35
0.45
V
GS
= 1.8
V, I
D
= 150 mA
0.49
1.0
Forward Transconductance
g
FS
V
DS
= 10
V, I
D
= 250 mA
0.4
S
CHARGES AND CAPACITANCES
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 5.0
V
156
pF
Output Capacitance
C
OSS
28
Reverse Transfer Capacitance
C
RSS
18
Total Gate Charge
Q
G(TOT)
V
GS
= 4.5 V, V
DD
= 10 V,
I
D
= 0.3 A
2.1
nC
Threshold Gate Charge
Q
G(TH)
0.125
GatetoSource Charge
Q
GS
0.325
GatetoDrain Charge
Q
GD
0.5
SWITCHING CHARACTERISTICS
(Note 3)
TurnOn Delay Time
td
(ON)
V
GS
= 4.5
V, V
DD
= 10
V,
I
D
= 200 mA, R
G
= 10
8.0
ns
Rise Time
t
r
8.2
TurnOff Delay Time
td
(OFF)
29
Fall Time
t
f
20.4
DRAINSOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V, I
S
= 250 mA
0.72
1.1
V
2. Pulse Test: pulse width
≤
300 s, duty cycle
≤
2%.
3. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
Device
Marking
Package
Shipping
NTA4151PT1
TN
SC75
3000/Tape & Reel
NTA4151PT1G
TN
SC75
(PbFree)
3000/Tape & Reel
NTE4151PT1G
TM
SC89
(PbFree)
3000/Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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