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參數(shù)資料
| 型號(hào)： | NTB45N06T4 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET 45 Amps, 60 Volts |
| 中文描述： | 45 A, 60 V, 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 418B-04, D2PAK-3 |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大小： | 64K |
| 代理商： | NTB45N06T4 |
NTP45N06, NTB45N06
http://onsemi.com
3
70
60
50
90
40
30
20
10
0
80
0.032
0.03
0.028
0.026
0.024
0.022
0.02
0.018
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
I
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
I
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
R
)
R
)
TJ, JUNCTION TEMPERATURE (
°
C)
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
R
(
I
2.2
1.8
1.4
1.6
1.2
1
0.6
100
10
1000
10000
0
70
3
60
2
1
50
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
0
0.05
0.042
0.034
40
30
20
0.026
0.018
0.01
10
50
60
90
Figure 3. On–Resistance vs. Gate–to–Source
Voltage
Figure 4. On–Resistance vs. Drain Current and
Gate Voltage
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–to–Source Leakage Current
vs. Voltage
90
–50
50
25
0
–25
75
125
100
3
5
8
4.5
4
3.5
0
30
40
20
10
50
60
40
30
20
10
0
6
70
0
40
30
20
10
50
60
90
70
175
150
0.8
80
4
5
5.5
6
6.5
7
7.5
VGS = 8 V
VDS > = 10 V
TJ = 25
°
C
TJ = 100
°
C
TJ = –55
°
C
TJ = 25
°
C
TJ = –55
°
C
TJ = 100
°
C
VGS = 10 V
VGS = 10 V
VGS = 0 V
TJ = 150
°
C
TJ = 100
°
C
TJ = 125
°
C
ID = 22.5 A
VGS = 10 V
VGS = 10 V
VGS = 7.5 V
VGS = 7 V
VGS = 6 V
VGS = 5.5 V
VGS = 5 V
VGS = 4.5 V
VGS = 6.5 V
80
80
VGS = 15 V
2
VGS = 9 V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTB45N06T4G | 功能描述:MOSFET 60V 45A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTB52N10 | 功能描述:MOSFET 100V 52A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTB52N10G | 功能描述:MOSFET 100V 52A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTB52N10G | 制造商:ON Semiconductor 功能描述:MOSFET |
| NTB52N10T4 | 功能描述:MOSFET 100V 52A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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