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參數(shù)資料
| 型號： | NTB25P06T4G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET −60 V, −27.5 A, P−Channel D2PAK |
| 中文描述： | 27.5 A, 60 V, 0.082 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, CASE 418B-04, D2PAK-3 |
| 文件頁數(shù)： | 6/6頁 |
| 文件大小： | 56K |
| 代理商： | NTB25P06T4G |
NTB25P06
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| NTP27N06L | Power MOSFET 27Amps, 60 Volts,Logic Level N-Channel TO-220(27A, 60 V,邏輯電平，N通道，TO-220封裝的功率MOSFET) |
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| NTB30N20 | Power MOSFET 30 Amps, 200 Volts N-Channel Enhancement-Mode(30A，200V，N通道，增強模式功率MOSFET) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTB27N06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 27 Amps, 60 Volts N?Channel TO?220 and D2PAK |
| NTB27N06L | 制造商:ON Semiconductor 功能描述:Power MOSFET 27Amps, 60 Volts,Logic Level N-Channel TO-220 |
| NTB27N06LT4 | 功能描述:MOSFET N-CH 60V 27A D2PAK-3 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| NTB27N06T4 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 27 Amps, 60 Volts N?Channel TO?220 and D2PAK |
| NTB30N06 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述:Power MOSFET 30Amps, 60 Volts, N-Channel TO-220 |
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