- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄363671 > NTB23N03R (ON SEMICONDUCTOR) Power MOSFET 23 Amps, 25 Volts N-Channel(23A，25V，N通道的功率MOSFET) PDF資料下載
參數(shù)資料
| 型號： | NTB23N03R |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET 23 Amps, 25 Volts N-Channel(23A，25V，N通道的功率MOSFET) |
| 中文描述： | 6 A, 25 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 418AA-01, D2PAK-3 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 53K |
| 代理商： | NTB23N03R |
NTB23N03R
http://onsemi.com
3
10 V
1.8
1.6
1.2
1.4
1
0.8
0.6
1000
10
10,000
8
4
12
0
20
0.08
0
16
10
4
4
2
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
I
D
,
0
V
GS
, GATETOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
Figure 2. Transfer Characteristics
I
D
,
0
0.16
0.20
8
4
0.12
0.08
0.04
0
16
12
Figure 3. OnResistance versus Drain Current
and Temperature
I
D
, DRAIN CURRENT (AMPS)
Figure 4. OnResistance versus Drain Current
and Temperature
I
D
, DRAIN CURRENT (AMPS)
R
D
,
R
D
,
Figure 5. OnResistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 6. DraintoSource Leakage Current
versus Voltage
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
R
D
,
(
I
D
,
20
50
50
25
0
25
75
125
100
0
3
4
2
1
5
0
8
4
16
12
0
0.04
0.12
0.20
0
20
25
15
10
5
V
GS
= 2.5 V
6
8
V
DS
≥
10 V
T
J
= 25
°
C
T
J
= 55
°
C
T
J
= 125
°
C
6
T
J
= 25
°
C
T
J
= 55
°
C
T
J
= 125
°
C
V
GS
= 10 V
V
GS
= 4.5 V
150
V
GS
= 0 V
T
J
= 150
°
C
T
J
= 125
°
C
I
D
= 6 A
V
GS
= 10 V
0.16
T
J
= 25
°
C
T
J
= 55
°
C
T
J
= 125
°
C
20
20
16
8
12
5 V
3.5 V
4 V
4.5 V
8 V
6 V
3 V
100
相關PDF資料 |
PDF描述 |
|---|---|
| NTB25P06 | Power MOSFET −60 V, −27.5 A, P−Channel D2PAK |
| NTB25P06G | Power MOSFET −60 V, −27.5 A, P−Channel D2PAK |
| NTB25P06T4 | Power MOSFET −60 V, −27.5 A, P−Channel D2PAK |
| NTB25P06T4G | Power MOSFET −60 V, −27.5 A, P−Channel D2PAK |
| NTB27N06L | Power MOSFET 27Amps, 60 Volts,Logic Level N-Channel TO-220(27A, 60 V,邏輯電平，N通道，TO-220封裝的功率MOSFET) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NTB23N03RG | 功能描述:MOSFET 25V 23A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTB23N03RT4 | 功能描述:MOSFET 25V 23A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTB23N03RT4G | 功能描述:MOSFET 25V 23A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTB-2401 | 制造商:Quest Technology International Inc 功能描述: |
| NTB-2402 | 制造商:Quest Technology International Inc 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復。