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參數(shù)資料
| 型號(hào)： | NTB22N06L |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET 22Amps, 60 Volts,Logic Level N-Channel TO-220(22A, 60 V,邏輯電平，N通道，TO-220封裝的功率MOSFET) |
| 中文描述： | 22 A, 60 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 418B-03, D2PAK-3 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 70K |
| 代理商： | NTB22N06L |
NTP22N06L, NTB22N06L
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage (Note 1.)
(V
GS
= 0 Vdc, I
D
= 250
μ
Adc)
Temperature Coefficient (Positive)
V
(BR)DSS
60
–
68.2
81
–
–
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(V
DS
= 60 Vdc, V
GS
= 0 Vdc)
(V
DS
= 60 Vdc, V
GS
= 0 Vdc, T
J
= 150
°
C)
I
DSS
–
–
–
–
1.0
10
μ
Adc
Gate–Body Leakage Current (V
GS
=
±
15
Vdc, V
DS
= 0 Vdc)
I
GSS
–
–
±
100
nAdc
ON CHARACTERISTICS
(Note 1.)
Gate Threshold Voltage (Note 1.)
(V
DS
= V
GS
, I
D
= 250
μ
Adc)
Threshold Temperature Coefficient (Negative)
V
GS(th)
1.0
–
1.79
5.0
2.0
–
Vdc
mV/
°
C
Static Drain–to–Source On–Resistance (Note 1.)
(V
GS
= 5.0 Vdc, I
D
= 11 Adc)
R
DS(on)
–
57
65
m
Static Drain–to–Source On–Voltage (Note 1.)
(V
GS
= 5.0 Vdc, I
D
= 22 Adc)
(V
GS
= 5.0 Vdc, I
D
= 11 Adc, T
J
= 150
°
C)
V
DS(on)
–
–
1.4
1.17
1.7
–
Vdc
Forward Transconductance (Note 1.) (V
DS
= 7.0 Vdc, I
D
= 11 Adc)
g
FS
–
14.6
–
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 25 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
iss
–
490
690
pF
Output Capacitance
C
oss
–
167
230
Transfer Capacitance
C
rss
–
56
80
SWITCHING CHARACTERISTICS
(Note 2.)
Turn–On Delay Time
t
d(on)
–
10
20
ns
Rise Time
= 30 Vdc, I
= 22 Adc,
(V
DD
D
22 Adc,
V
GS
= 5.0 Vdc, R
G
= 9.1
) (Note 1.)
t
r
–
115
230
Turn–Off Delay Time
t
d(off)
–
21
40
Fall Time
t
f
–
56
120
Gate Charge
(V
DS
= 48 Vdc, I
D
= 22 Adc,
V
GS
= 5.0 Vdc) (Note 1.)
Q
T
–
10.4
20
nC
Q
1
–
2.5
–
Q
2
–
7.0
–
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(I
S
= 22 Adc, V
GS
= 0 Vdc) (Note 1.)
(I
S
= 22 Adc, V
GS
= 0 Vdc, T
J
= 150
°
C)
V
SD
–
–
1.03
0.98
1.2
–
Vdc
Reverse Recovery Time
(I
S
= 22 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/
μ
s) (Note 1.)
V
t
rr
–
42
–
ns
t
a
–
26
–
t
b
–
16
–
Reverse Recovery Stored Charge
1. Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
2. Switching characteristics are independent of operating junction temperatures.
Q
RR
–
0.060
–
μ
C
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