參數(shù)資料
型號(hào): NTA4153N
廠商: ON SEMICONDUCTOR
英文描述: Small Signal MOSFET(小信號(hào)N溝道20V,915mA MOSFET 帶ESD保護(hù))
中文描述: 小信號(hào)MOSFET(小信號(hào)?溝道20V的,九一五毫安MOSFET的帶靜電放電保護(hù))
文件頁(yè)數(shù): 3/6頁(yè)
文件大?。?/td> 68K
代理商: NTA4153N
NTA4153N, NTE4153N
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
0
40
80
120
160
200
0
4
8
12
16
20
0
0.1
0.2
0.3
0.4
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
I
D,
DRAIN CURRENT (AMPS)
R
D
D
T
J
= 125
°
C
V
GS
= 2.5 V
T
J
= 55
°
C
T
J
= 25
°
C
0.6
0.8
1.0
1.2
1.4
1.6
50
25
0
25
50
75
100
125
150
0
0.1
0.2
0.3
0.4
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
Figure 1. OnRegion Characteristics
Figure 2. Transfer Characteristics
Figure 3. OnResistance vs. Drain Current and
Temperature
I
D,
DRAIN CURRENT (AMPS)
R
D
D
T
J
= 125
°
C
V
GS
= 4.5 V
T
J
= 55
°
C
T
J
= 25
°
C
Figure 4. OnResistance vs. Drain Current and
Temperature
Figure 5. OnResistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (
°
C)
I
D
= 0.35 A
V
GS
= 4.5 V
R
D
D
R
Figure 6. Capacitance Variation
DRAINTOSOURCE VOLTAGE (VOLTS)
C
T
J
= 25
°
C
V
GS
= 0 V
C
ISS
C
OSS
C
RSS
2.0 V
V
GS
= 2.6 V to 5.0 V
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
I
D
D
0
0.2
0.4
0.6
0.8
1.0
1.2
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
1.4 V
1.6 V
1.8 V
0
0.2
0.4
0.6
0.8
1.0
1.2
0
0.4
0.8
1.2
1.6
2.0
V
GS
, GATETOSOURCE VOLTAGE (VOLTS)
I
D
D
T
J
= 55
°
C
T
J
= 25
°
C
V
DS
10 V
T
J
= 125
°
C
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