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參數(shù)資料
| 型號： | NTA4153N |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Small Signal MOSFET(小信號N溝道20V，915mA MOSFET 帶ESD保護(hù)) |
| 中文描述： | 小信號MOSFET（小信號?溝道20V的，九一五毫安MOSFET的帶靜電放電保護(hù)） |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 68K |
| 代理商： | NTA4153N |
NTA4153N, NTE4153N
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise stated)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 A
20
26
V
DraintoSource Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
18.4
mV/
°
C
Zero Gate Voltage Drain Current
I
DSS
V
GS
= 0 V, V
DS
= 16
V
100
nA
GatetoSource Leakage Current
I
GSS
V
DS
= 0 V, V
GS
=
±
4.5 V
±
1.0
A
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250 A
0.45
0.76
V
Negative Threshold Temperature
Coefficient
V
GS(TH)
/T
J
2.15
mV/
°
C
DraintoSource On Resistance
R
DS(on)
V
GS
= 4.5
V, I
D
= 600 mA
127
230
m
V
GS
= 2.5
V, I
D
= 500 mA
170
275
V
GS
= 1.8
V, I
D
= 350 mA
242
700
V
GS
= 1.5
V, I
D
= 40 mA
500
9500
Forward Transconductance
g
FS
V
DS
= 10
V, I
D
= 400 mA
1.4
S
CHARGES AND CAPACITANCES
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 16
V
110
pF
Output Capacitance
C
OSS
16
Reverse Transfer Capacitance
C
RSS
12
Total Gate Charge
Q
G(TOT)
V
GS
= 4.5 V, V
DS
= 10
V,
I
D
= 0.2 A
1.82
nC
Threshold Gate Charge
Q
G(TH)
0.2
GatetoSource Charge
Q
GS
0.3
GatetoDrain Charge
Q
GD
0.42
SWITCHING CHARACTERISTICS
(Note 3)
TurnOn Delay Time
t
d(ON)
V
GS
= 4.5
V, V
DD
= 10
V,
I
D
= 0.2 A, R
G
= 10
3.7
ns
Rise Time
t
r
4.4
TurnOff Delay Time
t
d(OFF)
25
Fall Time
t
f
7.6
DRAINSOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
T
J
= 25
°
C
0.67
1.1
V
T
J
= 125
°
C
0.54
2. Pulse Test: pulse width
≤
300 s, duty cycle
≤
2%.
3. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
Device
Marking
(XX)
Package
Shipping
NTA4153NT1
TR
SC75 / SOT416
3000/Tape & Reel
NTA4153NT1G
TR
SC75 / SOT416
(PbFree)
3000/Tape & Reel
NTE4153NT1G
TP
SC89
(PbFree)
3000/Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTA4153NT1 | 功能描述:MOSFET 20V 915mA N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTA4153NT1G | 功能描述:MOSFET 20V 915mA N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTA4153NT1G | 制造商:ON Semiconductor 功能描述:N CHANNEL MOSFET 20V 915MA SC-75 |
| NTA4153NT1H | 制造商:Rochester Electronics LLC 功能描述: 制造商:ON Semiconductor 功能描述: |
| NTA-613 | 制造商:MISCELLANEOUS 功能描述: |
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