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參數(shù)資料
| 型號(hào)： | NDS8426A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Single N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 10500 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SOIC-8 |
| 文件頁數(shù)： | 6/7頁 |
| 文件大?。?/td> | 197K |
| 代理商： | NDS8426A |
NDS8426A Rev.B
1
0
6
12
18
24
30
0
20
40
60
80
I , DRAIN CURRENT (A)
g
TJ
25°C
F
V = 5V
125°C
Figure 13. Transconductance Variation with Drain
Current and Temperature
.
Figure 16. Maximum Safe Operating Area.
Typical Electrical and Thermal Characteristics
(continued)
0
0.2
2oz COPPER MOUNTING PAD AREA (in )
0.4
0.6
0.8
2
1
6
7
8
9
10
11
1b
1c
D
4.5"x5" FR-4 Board
o
T = 25 C
Still Air
V = 4.5V
1a
0
0.2
2oz COPPER MOUNTING PAD AREA (in )
0.4
0.6
0.8
2
1
0.5
1
1.5
2
2.5
S
1c
1b
1a
4.5"x5" FR-4 Board
o
T = 25 C
Still Air
0.1
0.2
0.5
V , DRAIN-SOURCE VOLTAGE (V)
1
3
5
10
20
40
0.05
0.1
0.5
1
5
10
30
60
I
RDS(ON) LIMIT
D
DC
1s
100ms
10ms
1ms
10s
V = 4.5V
SINGLE PULSE
R = See Note 1c
T = 25°C
100μs
Figure 14. SO-8 Maximum Steady-State Power
Dissipation versus Copper Mounting Pad Area.
Figure 15. Maximum Steady-State Drain
Current versus Copper Mounting Pad
Area.
Figure 17. Transient Thermal Response Curve
.
Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change
depending on the circuit board design.
0.0001
0.001
0.01
0.1
t , TIME (sec)
1
1
10
100
300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
T
r
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t / t
2
R (t) = r(t) * R
R = See Note 1c
T - T = P * R (t)
P(pk)
t
1
t
2
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PDF描述 |
|---|---|
| NDS8426 | Single N-Channel Enhancement Mode Field Effect Transistor |
| NDS8433 | Single P-Channel Enhancement Mode Field Effect Transistor |
| NDS8434A | Single P-Channel Enhancement Mode Field Effect Transistor |
| NDS8434 | Single P-Channel Enhancement Mode Field Effect Transistor |
| NDS8435A | Single P-Channel Enhancement Mode Field Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NDS8426A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO |
| NDS8433 | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDS8434 | 功能描述:MOSFET Single P-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDS8434_Q | 功能描述:MOSFET Single P-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDS8434A | 功能描述:MOSFET Single P-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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