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參數(shù)資料
| 型號： | NDS8426 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Single N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 9900 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 5/10頁 |
| 文件大?。?/td> | 266K |
| 代理商： | NDS8426 |
NDS8426 Rev.E
-50
-25
0
25
50
75
100
125
150
0.94
0.96
0.98
1
1.02
1.04
1.06
1.08
1.1
T , JUNCTION TEMPERATURE (°C)
D
I = 250μA
B
D
0
0.2
V , BODY DIODE FORWARD VOLTAGE (V)
0.4
0.6
0.8
1
1.2
0.0001
0.001
0.01
0.1
1
10
30
I
S
J
25°C
-55°C
V = 0V
Figure 7. Breakdown Voltage
Variation with Temperature
.
Figure 8. Body Diode Forward Voltage Variation
with Source Current and
Temperature
.
Typical Electrical Characteristics
(continued)
0
10
20
30
40
50
0
1
2
3
4
5
Q , GATE CHARGE (nC)
V
G
V = 5V
10V
I =9.9A
15V
0.1
0.2
0.5
1
2
5
10
20
200
500
1000
2000
3000
4000
6000
V , DRAIN TO SOURCE VOLTAGE (V)
C
C s
f = 1 MHz
V = 0 V
C ss
C s
G
D
S
V
DD
R
L
V
V
IN
OUT
V
GS
DUT
R
GEN
Figure 9. Capacitance Characteristics.
Figure 10. Gate Charge Characteristics
.
Figure 11. Switching Test Circuit
.
Figure 12. Switching Waveforms
.
10%
50%
90%
10%
90%
90%
50%
V
IN
V
OUT
on
off
d(off)
f
r
d(on)
t
t
t
t
t
t
INVERTED
10%
PULSE WIDTH
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NDS8433 | Single P-Channel Enhancement Mode Field Effect Transistor |
| NDS8434A | Single P-Channel Enhancement Mode Field Effect Transistor |
| NDS8434 | Single P-Channel Enhancement Mode Field Effect Transistor |
| NDS8435A | Single P-Channel Enhancement Mode Field Effect Transistor |
| NDS8435 | Single P-Channel Enhancement Mode Field Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NDS8426A | 功能描述:MOSFET Single N-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDS8426A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO |
| NDS8433 | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDS8434 | 功能描述:MOSFET Single P-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDS8434_Q | 功能描述:MOSFET Single P-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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