參數(shù)資料
型號(hào): NDS8410A
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號(hào)晶體管
英文描述: Single N-Channel Enhancement Mode Field Effect Transistor
中文描述: 10800 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: SO-8
文件頁(yè)數(shù): 4/10頁(yè)
文件大?。?/td> 265K
代理商: NDS8410A
NDS8410A Rev.C1
0
0.5
1
1.5
2
2.5
3
0
10
20
30
40
50
V , DRAIN-SOURCE VOLTAGE (V)
I
D
V = 10V
6.0
2.5
4.5
3.5
4.0
3.0
0
10
20
30
40
50
0.5
1
1.5
2
2.5
I , DRAIN CURRENT (A)
D
V = 3.5 V
R
D
10
4.5
5.0
4.0
7.0
6.0
Typical Electrical Characteristics
-50
-25
0
T , JUNCTION TEMPERATURE (°C)
25
50
75
100
125
150
0.6
0.8
1
1.2
1.4
1.6
D
R
D
V = 10V
I = 10.8A
0
10
20
30
40
50
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
I , DRAIN CURRENT (A)
D
R
D
V = 10V
J
25°C
-55°C
1
1.5
2
2.5
3
3.5
4
4.5
5
0
10
20
30
40
50
60
V , GATE TO SOURCE VOLTAGE (V)
I
25
125
V = 10V
DS
D
TJ
-50
-25
0
T , JUNCTION TEMPERATURE (°C)
25
50
75
100
125
150
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
G
V
G
I = 250μA
V = V
GS
Figure 6. Gate Threshold Variation
with Temperature
.
Figure 1. On-Region Characteristics
.
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage
.
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation
with Drain Current and Temperature
.
Figure 5. Transfer Charateristics
.
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