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參數(shù)資料
| 型號(hào)： | NDS355N |
| 廠(chǎng)商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | N-Channel Logic Level Enhancement Mode Field Effect Transistor（1.6A，30V，0.125Ω）(N溝道邏輯增強(qiáng)型MOS場(chǎng)效應(yīng)管（漏電流1.6A, 漏源電壓30V，導(dǎo)通電阻0.125Ω）) |
| 中文描述： | 1600 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-3 |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大?。?/td> | 74K |
| 代理商： | NDS355N |
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
I
SM
V
SD
Maximum Continuous Source Current
0.6
A
Maximum Pulse Source Current
(Note 2)
6
A
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 1.6 A
0.8
1.2
V
Notes:
1. R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
θ
JC
is guaranteed by
design while R
θ
CA
is determined by the user's board design.
P
D
(
t
) =
T
J
T
A
R
θ
J A
(
t
)
=
T
J
T
A
R
θ
J C
+
R
θ
CA
(
t
)
=
I
D
2
(
t
)×
R
DS
(
ON
)
T
J
Typical R
θ
JA
using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
a. 250
o
C/W when mounted on a 0.02 in
2
pad of 2oz cpper.
b. 270
o
C/W when mounted on a 0.001 in
2
pad of 2oz cpper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
NDS355N Rev. D1
1a
1b
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NDS356AP | P-Channel Logic Level Enhancement Mode Field Effect Transistor（-1.1A，-30V，0.3Ω）(P溝道邏輯增強(qiáng)型MOS場(chǎng)效應(yīng)管（漏電流-1.1A, 漏源電壓-30V，導(dǎo)通電阻0.3Ω）) |
| NDS356 | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| NDS356P | P-Channel Logic Level Enhancement Mode Field Effect Transistor（-1.1A，-20V，0.3Ω）(P溝道邏輯增強(qiáng)型MOS場(chǎng)效應(yīng)管（漏電流-1.1A, 漏源電壓-20V，導(dǎo)通電阻0.3Ω）) |
| NDS7002 | N-Channel Enhancement Mode Field Effect Transistor |
| NDS7002A | N-Channel Enhancement Mode Field Effect Transistor(N溝道增強(qiáng)型場(chǎng)效應(yīng)管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NDS355N | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SOT-23 |
| NDS355N | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| NDS355N_D87Z | 功能描述:MOSFET N-Channel FET LL Enhancement RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDS356 | 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| NDS356AP | 功能描述:MOSFET P-Channel Logic RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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