參數(shù)資料
型號(hào)： NDS352AP
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號(hào)晶體管
英文描述： P-Channel Logic Level Enhancement Mode Field Effect Transistor（-0.9A，-30V，0.5Ω）(P溝道邏輯增強(qiáng)型MOS場(chǎng)效應(yīng)管（漏電流-0.9A, 漏源電壓-30V，導(dǎo)通電阻0.5Ω）)
中文描述： 900 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SUPERSOT-3
文件頁(yè)數(shù)： 6/6頁(yè)
文件大小： 78K
代理商： NDS352AP
NDS352Ap Rev.C
Figure 14. Maximum Safe Operating Area.
Typical Electrical Characteristics
(continued)
Figure 17. Transient Thermal Response Curve.
Note : Characterization performed using the conditions described in note 1b. Transient thermal response will
change depending on the circuit board design.
-5
-4
-3
-2
-1
0
0
0.5
1
1.5
2
2.5
3
I , DRAIN CURRENT (A)
g
TJ
25°C
F
V = - 5V
DS
125°C
0.1
0.2
0.5
- V , DRAIN-SOURCE VOLTAGE (V)
1
2
5
10
20
30
50
0.01
0.05
0.1
0.5
1
2
5
10
20
-
D
RDS(ON) LIMIT
A
DC
1s
100ms
10ms
1ms
10s
V = -4.5V
SINGLE PULSE
R = See Note 1b
T = 25°C
0
0.1
0.2
0.3
0.4
0.6
0.7
0.8
0.9
1
1.1
1.2
2oz COPPER MOUNTING PAD AREA (in )
-
D
1b
1a
4.5"x5" FR-4 Board
T = 25 C
Still Air
V = -4.5V
GS
0
0.1
0.2
0.3
0.4
0
0.2
0.4
0.6
0.8
1
2oz COPPER MOUNTING PAD AREA (in )
S
2
1b
1a
4.5"x5" FR-4 Board
T = 25 C
Still Air
Figue 15. SuperSOT
TM _
3 Maximum
Steady-State Power Dissipation versus
Copper Mounting Pad Area.
Figure 13. Transconductance Variation with Drain
Current and Temperature
.
Figure 16. Maximum Steady-State Drain
Current versus Copper Mounting Pad Area
.
0.0001
0.001
0.01
0.1
t , TIME (sec)
1
10
100
300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
T
Duty Cycle, D = t /t
2
R (t) = r(t) * R
R = See Note 1b
T - T = P * R JA
P(pk)
t
1
t
2
r
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
相關(guān)PDF資料
PDF描述
NDS352P P-Channel Logic Level Enhancement Mode Field Effect Transistor（-0.85A，-20V，0.5Ω）(P溝道邏輯增強(qiáng)型MOS場(chǎng)效應(yīng)管（漏電流-0.85A, 漏源電壓-20V，導(dǎo)通電阻0.5Ω）)
NDS355AN N-Channel Logic Level Enhancement Mode Field Effect Transistor（1.7A，30V，0.125Ω）(N溝道邏輯增強(qiáng)型MOS場(chǎng)效應(yīng)管（漏電流1.7A, 漏源電壓30V，導(dǎo)通電阻0.125Ω）)
NDS355N N-Channel Logic Level Enhancement Mode Field Effect Transistor（1.6A，30V，0.125Ω）(N溝道邏輯增強(qiáng)型MOS場(chǎng)效應(yīng)管（漏電流1.6A, 漏源電壓30V，導(dǎo)通電阻0.125Ω）)
NDS356AP P-Channel Logic Level Enhancement Mode Field Effect Transistor（-1.1A，-30V，0.3Ω）(P溝道邏輯增強(qiáng)型MOS場(chǎng)效應(yīng)管（漏電流-1.1A, 漏源電壓-30V，導(dǎo)通電阻0.3Ω）)
NDS356 P-Channel Logic Level Enhancement Mode Field Effect Transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NDS352AP 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SOT-23
NDS352AP 制造商:Fairchild Semiconductor Corporation 功能描述:30V SSOT-3 PCH
NDS352AP_D87Z 功能描述:MOSFET P-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDS352AP_ROHS 制造商:Fairchild Semiconductor Corporation 功能描述:
NDS352AP-CUT TAPE 制造商:FAIRCHILD 功能描述:NDS Series P-Channel 30 V 0.5 Ohm Field Effect Transistor - SSOT-3
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