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參數(shù)資料
| 型號： | NDS352AP |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | P-Channel Logic Level Enhancement Mode Field Effect Transistor（-0.9A，-30V，0.5Ω）(P溝道邏輯增強型MOS場效應管（漏電流-0.9A, 漏源電壓-30V，導通電阻0.5Ω）) |
| 中文描述： | 900 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-3 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 78K |
| 代理商： | NDS352AP |
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= -250 μA
V
DS
= -24 V, V
GS
= 0 V
-30
V
Zero Gate Voltage Drain Current
-1
μA
T
J
=125°C
-10
μA
I
GSSF
I
GSSR
Gate - Body Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
100
nA
Gate - Body Leakage, Reverse
-100
nA
ON CHARACTERISTICS
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= -250 μA
-0.8
-1.7
-2.5
V
T
J
=125°C
-0.5
-1.4
-2.2
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= -4.5 V, I
D
= -0.9 A
0.45
0.5
T
J
=125°C
0.65
0.7
V
GS
= -10 V, I
D
= -1 A
V
GS
= -4.5 V, V
DS
= -5 V
V
DS
= -5 V, I
D
= -0.9 A
0.25
0.3
I
D(ON)
g
FS
On-State Drain Current
Forward Transconductance
-2
A
1.9
S
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
V
= -15 V, V
GS
= 0 V,
f = 1.0 MHz
135
pF
C
oss
C
rss
Output Capacitance
88
pF
Reverse Transfer Capacitance
40
pF
SWITCHING CHARACTERISTICS
(Note 2)
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
Turn - On Delay Time
V
DD
= -6 V, I
D
= -1 A,
V
GS
= -4.5 V, R
GEN
= 6
5
10
ns
Turn - On Rise Time
17
30
ns
Turn - Off Delay Time
35
70
ns
Turn - Off Fall Time
30
8
16
35
30
60
15
30
90
90
ns
Turn - On Delay Time
V
DD
= -10 V, I
D
= -1 A,
V
GS
= -10 V, R
GEN
= 50
ns
t
r
Turn - On Rise Time
ns
t
d(off)
Turn - Off Delay Time
ns
t
f
Q
g
Q
gs
Q
gd
Turn - Off Fall Time
ns
Total Gate Charge
V
DS
= -10 V, I
D
= -0.9 A,
V
GS
= -4.5 V
2
3
nC
Gate-Source Charge
0.5
nC
Gate-Drain Charge
1
nC
NDS352AP Rev.D
相關PDF資料 |
PDF描述 |
|---|---|
| NDS352P | P-Channel Logic Level Enhancement Mode Field Effect Transistor（-0.85A，-20V，0.5Ω）(P溝道邏輯增強型MOS場效應管（漏電流-0.85A, 漏源電壓-20V，導通電阻0.5Ω）) |
| NDS355AN | N-Channel Logic Level Enhancement Mode Field Effect Transistor（1.7A，30V，0.125Ω）(N溝道邏輯增強型MOS場效應管（漏電流1.7A, 漏源電壓30V，導通電阻0.125Ω）) |
| NDS355N | N-Channel Logic Level Enhancement Mode Field Effect Transistor（1.6A，30V，0.125Ω）(N溝道邏輯增強型MOS場效應管（漏電流1.6A, 漏源電壓30V，導通電阻0.125Ω）) |
| NDS356AP | P-Channel Logic Level Enhancement Mode Field Effect Transistor（-1.1A，-30V，0.3Ω）(P溝道邏輯增強型MOS場效應管（漏電流-1.1A, 漏源電壓-30V，導通電阻0.3Ω）) |
| NDS356 | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NDS352AP | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SOT-23 |
| NDS352AP | 制造商:Fairchild Semiconductor Corporation 功能描述:30V SSOT-3 PCH |
| NDS352AP_D87Z | 功能描述:MOSFET P-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDS352AP_ROHS | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| NDS352AP-CUT TAPE | 制造商:FAIRCHILD 功能描述:NDS Series P-Channel 30 V 0.5 Ohm Field Effect Transistor - SSOT-3 |
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