參數(shù)資料
型號(hào)： NDS336P
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號(hào)晶體管
英文描述： P-Channel Logic Level Enhancement Mode Field Effect Transistor（-1.2A，-20V，0.27Ω）(P溝道邏輯增強(qiáng)型MOS場(chǎng)效應(yīng)管（漏電流-1.2A, 漏源電壓-20V，導(dǎo)通電阻0.27Ω）)
中文描述： 1200 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
封裝： SUPERSOT-3
文件頁(yè)數(shù)： 3/6頁(yè)
文件大?。?/td> 77K
代理商： NDS336P
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
I
SM
V
SD
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solde mounting surface of the drain pins. R
θ
JC
is guaranteed by
design while R
θ
CA
is determined by the user's board design.
P
D
(
t
) =
Maximum Continuous Source Current
-0.42
A
Maximum Pulsed Drain-Source Diode Forward Current
-10
A
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= -0.42
(Note 2)
-0.65
-1.2
V
Typical R
θ
JA
using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
a. 250
o
C/W when mounted on a 0.02 in
2
pad of 2oz copper.
b. 270
o
C/W when mounted on a 0.001 in
2
pad of 2oz copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
NDS336P Rev. E
T
J
T
A
R
θ
JA
(
t
)
=
T
J
T
A
R
θ
JC
+
R
θ
CA
(
t
)
=
I
D
2
(
t
)×
R
DS
(
ON
)
@
T
J
1a
1b
相關(guān)PDF資料
PDF描述
NDS336 P-Channel Logic Level Enhancement Mode Field Effect Transistor
NDS351AN N-Channel Logic Level Enhancement Mode Field Effect Transistor（1.2A，30V，0.25Ω）(N溝道邏輯增強(qiáng)型MOS場(chǎng)效應(yīng)管（漏電流1.2A, 漏源電壓30V，導(dǎo)通電阻0.25Ω）)
NDS351N N-Channel Logic Level Enhancement Mode Field Effect Transistor（1.1A，30V，0.25Ω）(N溝道邏輯增強(qiáng)型MOS場(chǎng)效應(yīng)管（漏電流1.1A, 漏源電壓30V，導(dǎo)通電阻0.25Ω）)
NDS352AP P-Channel Logic Level Enhancement Mode Field Effect Transistor（-0.9A，-30V，0.5Ω）(P溝道邏輯增強(qiáng)型MOS場(chǎng)效應(yīng)管（漏電流-0.9A, 漏源電壓-30V，導(dǎo)通電阻0.5Ω）)
NDS352P P-Channel Logic Level Enhancement Mode Field Effect Transistor（-0.85A，-20V，0.5Ω）(P溝道邏輯增強(qiáng)型MOS場(chǎng)效應(yīng)管（漏電流-0.85A, 漏源電壓-20V，導(dǎo)通電阻0.5Ω）)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NDS336P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SOT-23
NDS336P_D87Z 功能描述:MOSFET P-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDS351AN 功能描述:MOSFET SOT-23 N-CH LOGIC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDS351AN 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SOT-23
NDS351AN_Q 功能描述:MOSFET SOT-23 N-CH LOGIC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*