參數(shù)資料
型號： NDS332P
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號晶體管
英文描述： P-Channel Logic Level Enhancement Mode Field Effect Transistor
中文描述： 1000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
封裝： SUPERSOT-3
文件頁數(shù)： 2/6頁
文件大小： 78K
代理商： NDS332P
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= -250 μA
V
DS
= -16 V, V
GS
= 0 V
-20
V
Zero Gate Voltage Drain Current
-1
μA
T
J
= 55°C
-10
μA
I
GSS
Gate - Body Leakage
Current
V
GS
= 8 V, V
DS
= 0 V
100
nA
I
GSS
Gate - Body Leakage
Current
V
GS
= -8 V, V
DS
= 0 V
-100
nA
ON CHARACTERISTICS
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= -250 μA
-0.4
-0.6
-1
V
T
J
=125°C
-0.3
-0.45
-0.8
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= -2.7 V, I
D
= -1 A
0.35
0.41
T
J
=125°C
0.5
0.74
V
GS
= -4.5 V, I
D
= -1.1 A
0.26
0.3
I
D(ON)
On-State Drain Current
V
GS
= -2.7 V, V
DS
= -5 V
-1.5
A
V
GS
= -4.5 V, V
DS
= -5 V
-2.5
g
F
S
DYNAMIC CHARACTERISTICS
Forward Transconductance
V
DS
= -5 V, I
D
= -1 A
2.2
S
C
iss
Input Capacitance
V
= -10 V, V
GS
= 0 V,
f = 1.0 MHz
195
pF
C
oss
Output Capacitance
105
pF
C
rss
Reverse Transfer Capacitance
40
pF
SWITCHING CHARACTERISTICS
(Note 2)
t
D(on)
t
r
t
D(off)
t
f
Q
g
Turn - On Delay Time
V
DD
= -6 V, I
D
= -1 A,
V
GS
= -4.5 V, R
GEN
= 6
8
15
ns
Turn - On Rise Time
30
45
ns
Turn - Off Delay Time
25
45
ns
Turn - Off Fall Time
27
45
ns
Total Gate Charge
V
DS
= -5 V, I
D
= -1 A,
V
GS
= -4.5 V
3.7
5
nC
Q
gs
Gate-Source Charge
0.5
nC
Q
gd
Gate-Drain Charge
0.9
nC
NDS332P Rev. E
相關(guān)PDF資料
PDF描述
NDS335 N-Channel Logic Level Enhancement Mode Field Effect Transistor
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NDS336P P-Channel Logic Level Enhancement Mode Field Effect Transistor（-1.2A，-20V，0.27Ω）(P溝道邏輯增強型MOS場效應(yīng)管（漏電流-1.2A, 漏源電壓-20V，導(dǎo)通電阻0.27Ω）)
NDS336 P-Channel Logic Level Enhancement Mode Field Effect Transistor
NDS351AN N-Channel Logic Level Enhancement Mode Field Effect Transistor（1.2A，30V，0.25Ω）(N溝道邏輯增強型MOS場效應(yīng)管（漏電流1.2A, 漏源電壓30V，導(dǎo)通電阻0.25Ω）)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NDS332P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SOT-23
NDS332P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SOT-23 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, P, SOT-23 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, P, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:1A; Drain Source Voltage Vds:20V; On Resistance Rds(on):410mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-600mV; No. of Pins:3 ;RoHS Compliant: Yes
NDS332P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET 制造商:Fairchild Semiconductor Corporation 功能描述:P CH MOSFET, -20V, 1A, SUPER SOT-3
NDS332P_D87Z 功能描述:MOSFET P-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDS332P_Q 功能描述:MOSFET SOT-23 P-CH LOGIC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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