參數(shù)資料
型號(hào)： NDS332
廠商： Fairchild Semiconductor Corporation
英文描述： P-Channel Logic Level Enhancement Mode Field Effect Transistor
中文描述： P溝道增強(qiáng)模式的邏輯電平場(chǎng)效應(yīng)晶體管
文件頁(yè)數(shù)： 6/6頁(yè)
文件大?。?/td> 78K
代理商： NDS332
NDS332PRev. E
Figure 14. Maximum Safe Operating Area
.
Typical Electrical Characteristics
(continued)
Figure 17. Transient Thermal Response Curve.
Note : Characterization performed using the conditions described in note 1b. Transient thermal response will
change depending on the circuit board design.
-3
-2.5
-2
-1.5
-1
I , DRAIN CURRENT (A)
-0.5
0
0
1
2
3
4
g
J
F
V =- 5V
125°C
25°C
0.1
0.2
0.5
-V , DRAIN-SOURCE VOLTAGE (V)
1
2
5
10
20
50
0.01
0.03
0.1
0.5
1
2
5
10
20
-
D
RDS(ON) LIMIT
V = -2.7V
SINGLE PULSE
R = See Note 1b
T = 25°C
GS
1s
100ms
1ms
10ms
D
C
10s
0
0.1
0.2
0.3
0.4
0.6
0.8
1
1.2
1.4
2oz COPPER MOUNTING PAD AREA (in )
-
D
1b
1a
4.5"x5" FR-4 Board
T = 25 C
Still Air
V = -2.7V
A
0
0.1
0.2
0.3
0.4
0
0.2
0.4
0.6
0.8
1
2oz COPPER MOUNTING PAD AREA (in )
S
2
1b
1a
4.5"x5" FR-4 Board
T = 25 C
Still Air
Figue 15. SuperSOT
TM _
3 Maximum
Steady-State Power Dissipation versus
Copper Mounting Pad Area.
Figure 13. Transconductance Variation with
Drain Current and Temperature
.
Figure 16. Maximum Steady-State Drain
Current versus Copper Mounting Pad Area
.
0.0001
0.001
0.01
0.1
t , TIME (sec)
1
10
100
300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
T
Duty Cycle, D = t /t
2
R (t) = r(t) * R
R = See Note 1b
T - T = P * R JA
P(pk)
t
1
t
2
r
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
相關(guān)PDF資料
PDF描述
NDS332P P-Channel Logic Level Enhancement Mode Field Effect Transistor
NDS335 N-Channel Logic Level Enhancement Mode Field Effect Transistor
NDS335N N-Channel Logic Level Enhancement Mode Field Effect Transistor
NDS336P P-Channel Logic Level Enhancement Mode Field Effect Transistor（-1.2A，-20V，0.27Ω）(P溝道邏輯增強(qiáng)型MOS場(chǎng)效應(yīng)管（漏電流-1.2A, 漏源電壓-20V，導(dǎo)通電阻0.27Ω）)
NDS336 P-Channel Logic Level Enhancement Mode Field Effect Transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NDS332P 功能描述:MOSFET SOT-23 P-CH LOGIC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDS332P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SOT-23
NDS332P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SOT-23 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, P, SOT-23 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, P, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:1A; Drain Source Voltage Vds:20V; On Resistance Rds(on):410mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-600mV; No. of Pins:3 ;RoHS Compliant: Yes
NDS332P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET 制造商:Fairchild Semiconductor Corporation 功能描述:P CH MOSFET, -20V, 1A, SUPER SOT-3
NDS332P_D87Z 功能描述:MOSFET P-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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