參數(shù)資料
型號(hào): NDS332
廠商: Fairchild Semiconductor Corporation
英文描述: P-Channel Logic Level Enhancement Mode Field Effect Transistor
中文描述: P溝道增強(qiáng)模式的邏輯電平場(chǎng)效應(yīng)晶體管
文件頁(yè)數(shù): 5/6頁(yè)
文件大小: 78K
代理商: NDS332
NDS332PRev. E
Figure 7. Breakdown Voltage Variation with
Temperature
.
Typical Electrical Characteristics
(continued)
G
D
S
V
DD
R
L
V
V
IN
OUT
V
GS
DUT
R
GEN
Figure 9. Capacitance Characteristics
.
Figure 10. Gate Charge Characteristics
.
Figure 11. Switching Test Circuit
.
Figure 12. Switching Waveforms
.
-50
-25
0
25
50
75
100
125
150
0.92
0.96
1
1.04
1.08
1.12
T , JUNCTION TEMPERATURE (°C)
D
I = -250μA
B
D
0
0.2
-V , BODY DIODE FORWARD VOLTAGE (V)
0.4
0.6
0.8
1
0.0001
0.001
0.01
0.05
0.1
1
-
TJ
25°C
-55°C
V =0V
S
0.1
0.2
0.5
1
2
5
10
20
20
30
50
100
200
300
500
-V , DRAIN TO SOURCE VOLTAGE (V)
C
f = 1 MHz
V = 0V
C ss
C s
C ss
0
1
2
3
4
5
0
1
2
3
4
5
Q , GATE CHARGE (nC)
-
G
I = -1A
V = -5V
DS
-10V
-15V
10%
50%
90%
10%
90%
90%
50%
V
IN
V
OUT
on
off
d(off)
f
r
d(on)
t
t
t
t
t
t
INVERTED
10%
PULSE WIDTH
Figure 8. Body Diode ForwardVoltageVariation with
Source Current and Temperature
.
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NDS332P P-Channel Logic Level Enhancement Mode Field Effect Transistor
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NDS336P P-Channel Logic Level Enhancement Mode Field Effect Transistor(-1.2A,-20V,0.27Ω)(P溝道邏輯增強(qiáng)型MOS場(chǎng)效應(yīng)管(漏電流-1.2A, 漏源電壓-20V,導(dǎo)通電阻0.27Ω))
NDS336 P-Channel Logic Level Enhancement Mode Field Effect Transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NDS332P 功能描述:MOSFET SOT-23 P-CH LOGIC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDS332P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SOT-23
NDS332P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SOT-23 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, P, SOT-23 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, P, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:1A; Drain Source Voltage Vds:20V; On Resistance Rds(on):410mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-600mV; No. of Pins:3 ;RoHS Compliant: Yes
NDS332P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET 制造商:Fairchild Semiconductor Corporation 功能描述:P CH MOSFET, -20V, 1A, SUPER SOT-3
NDS332P_D87Z 功能描述:MOSFET P-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube