參數(shù)資料
型號(hào): NDP708B
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel Enhancement Mode Field Effect Transistor
中文描述: 54 A, 80 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: TO-220, 3 PIN
文件頁(yè)數(shù): 6/6頁(yè)
文件大?。?/td> 74K
代理商: NDP708B
NDP708.SAM
0
10
20
I , DRAIN CURRENT (A)
30
40
50
60
0
10
20
30
40
50
g
TJ
25°C
F
V = 10V
125°C
t
p
t
p
V = 10V
V
DD
BV
DSS
I
L
t is adjusted to reach
the desired peak inductive
current, I .
L
+
-
V
DD
1
2
3
5
10
20
30
80
150
0.5
1
2
5
10
20
100
200
300
V , DRAIN-SOURCE VOLTAGE (V))
I
D
RDS(ON) Limit
V = 20V
SINGLE PULSE
T = 25°C
100μs
1ms
10ms
100ms
10μs
Figure 13. Transconductance Variation
with Drain Current and Temperature
.
Figure 14. Unclamped Inductive Load
Circuit and Waveforms.
Figure 15. Maximum Safe Operating Area
.
Figure 16. Transient Thermal Response Curve
.
Typical Electrical Characteristics
(continued)
0.01
0.02
0.05
0.1
0.2
0.5
1
2
t ,TIME (ms)
5
10
20
50
100
200
500
1000
0.01
0.02
0.03
0.05
0.1
0.2
0.3
0.5
1
T
Single Pulse
D = 0.5
0.1
0.05
0.02
0.2
Duty Cycle, D = t /t
2
R (t) = r(t) * R
R = 1.0 °C/W
T - T = P * R (t)
P(pk)
t
1
t
2
r
0.01
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