參數(shù)資料
型號(hào)： NDP7052L
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi)： JFETs
英文描述： N-Channel Logic Level Enhancement Mode Field Effect Transistor
中文描述： 75 A, 50 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： TO-220, 3 PIN
文件頁(yè)數(shù)： 2/4頁(yè)
文件大小： 54K
代理商： NDP7052L
Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
DRAIN-SOURCE AVALANCHE RATINGS
(Note)
W
DSS
I
AR
OFF CHARACTERISTICS
Single Pulse Drain-Source Avalanche Energy
V
DD
= 25 V, I
D
= 75 A
550
mJ
Maximum Drain-Source Avalanche Current
75
A
BV
DSS
BV
DSS
/
T
J
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 μA
I
D
= 250 μA, Referenced to 25
o
C
50
V
Breakdown Voltage Temp. Coefficient
0.075
V/
o
C
Zero Gate Voltage Drain Current
V
DS
= 48 V, V
GS
= 0 V
250
μA
T
J
= 125°C
1
mA
I
GSSF
I
GSSR
ON CHARACTERISTICS
(Note)
V
GS(th)
/
T
J
V
GS(th)
Gate Threshold Voltage
Gate - Body Leakage, Forward
V
GS
= 16 V, V
DS
= 0 V
V
GS
= -16 V, V
DS
= 0 V
100
nA
Gate - Body Leakage, Reverse
-100
nA
Gate Threshold VoltageTemp.Coefficient
I
D
= 250 μA, Referenced to 25
o
C
-0.005
V/
o
C
V
DS
= V
GS
, I
D
= 250 μA
1
1.3
2
V
T
J
= 125°C
0.8
0.85
1.6
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= 5 V, I
D
= 37.5 A
0.0085
0.01
T
J
= 150°C
0.014
0.018
V
GS
= 10 V, I
D
= 37.5 A
V
GS
= 5 V, V
DS
= 10 V
V
DS
= 5 V, I
D
= 37.5 A
0.0065
0.0075
I
D(on)
g
FS
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
(Note)
On-State Drain Current
60
A
Forward Transconductance
69
S
V
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
4030
pF
1260
pF
450
pF
t
D(on)
Turn - On Delay Time
V
DD
= 25 V, I
D
= 37.5 A,
V
GS
= 5 V, R
GEN
= 10
R
GS
= 10
25
50
nS
t
r
t
D(off)
Turn - On Rise Time
215
400
nS
Turn - Off Delay Time
110
200
nS
t
f
Q
g
Q
gs
Q
gd
DRAIN-SOURCE DIODE CHARACTERISTICS
Turn - Off Fall Time
170
300
nS
Total Gate Charge
V
= 24 V
I
D
= 75 A , V
GS
= 5 V
92
130
nC
Gate-Source Charge
15
nC
Gate-Drain Charge
45
nC
I
S
I
SM
V
SD
t
rr
I
rr
Maximum Continuos Drain-Source Diode Forward Current
75
A
Maximum Pulsed Drain-Source Diode Forward Current
180
A
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 37.5 A
(Note)
V
GS
= 0 V, I
= 37.5 A
dI
F
/dt = 100 A/μs
0.9
1.3
V
Reverse Recovery Time
40
150
ns
Reverse Recovery Current
2
10
A
Note:
Pulse Test: Pulse Width < 300 μs, Duty Cycle < 2.0%.
NDP7052L Rev.B
1
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