參數(shù)資料
型號: NDP7052
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel Enhancement Mode Field Effect Transistor
中文描述: 75 A, 50 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: TO-220, 3 PIN
文件頁數(shù): 4/6頁
文件大小: 57K
代理商: NDP7052
NDP7052 Rev.B1
Typical Electrical Characteristics
(continued)
0
20
40
60
80
100
120
140
0
2
4
6
8
10
Q , GATE CHARGE (nC)
V
G
I = 37.5A
V = 12V
24V
48V
1
5
10
20
50
200
500
1000
2000
6000
V , DRAIN TO SOURCE VOLTAGE (V)
C
f = 1 MHz
V = 0V
C ss
C s
C ss
Figure 8.Capacitance Characteristics
.
Figure 7. Gate Charge Characteristics.
0.5
1
3
5
10
20
30
80
0.5
1
2
5
10
20
50
100
200
400
V , DRAIN-SOURCE VOLTAGE (V))
I
D
100μs
1ms
10ms
100ms
DC
R Lmt
DS(ON)
V = 10V
SINGLE PULSE
R = 1 C/W
T = 25 °C
GS
JC
o
Figure 9. Maximum Safe Operating Area.
0.1
0.3
1
3
10
30
100
300
1,000
0
500
1000
1500
2000
SINGLE PULSE TIME (mS)
P
SINGLE PULSE
R =1° C/W
T = 25°C
JC
Figure 10. Single Pulse Maximum
Power
Dissipation.
0.01
0.05
0.1
0.5
1
5
10
50
100
500
1000
0.01
0.02
0.03
0.05
0.1
0.2
0.3
0.5
1
t ,TIME (ms)
T
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t /t
2
R (t) = r(t) * R
R = 1°C/W
T - T = P * R JC
P(pk)
t
1
t
2
r
Figure 11. Transient Thermal Response Curve
.
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