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參數(shù)資料
| 型號： | NDP7051 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 70 A, 50 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁數(shù)： | 2/12頁 |
| 文件大小： | 360K |
| 代理商： | NDP7051 |
Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
W
DSS
Single Pulse Drain-Source Avalanche
Energy
V
DD
= 25 V, I
D
= 70 A
500
mJ
I
AR
OFF CHARACTERISTICS
Maximum Drain-Source Avalanche Current
70
A
BV
DSS
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 μA
V
DS
= 40 V, V
GS
= 0 V
50
V
Zero Gate Voltage Drain Current
10
μA
T
J
= 125°C
1
mA
I
GSSF
I
GSSR
ON CHARACTERISTICS
(Note 1)
Gate - Body Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
100
nA
Gate - Body Leakage, Reverse
-100
nA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 μA
2
2.9
4
V
T
J
= 125°C
1.4
2.2
3.6
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= 10 V, I
D
= 35 A
0.011
0.013
T
J
= 125°C
0.018
0.023
I
D(on)
g
FS
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
(Note 1)
On-State Drain Current
V
GS
= 10 V, V
DS
= 10 V
V
DS
= 10 V, I
D
= 35 A
60
A
Forward Transconductance
30
S
V
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
1930
pF
870
pF
310
pF
t
D(on)
Turn - On Delay Time
V
DD
= 25 V, I
D
= 70 A,
V
GS
= 10 V, R
GEN
= 5
13
30
nS
t
r
t
D(off)
Turn - On Rise Time
98
200
nS
Turn - Off Delay Time
36
80
nS
t
f
Q
g
Q
gs
Q
gd
Turn - Off Fall Time
65
150
nS
Total Gate Charge
V
= 48 V,
I
D
= 70 A, V
GS
= 10 V
67
100
nC
Gate-Source Charge
11
nC
Gate-Drain Charge
38
nC
NDP7051 Rev. D
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