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參數(shù)資料
| 型號(hào)： | NDP610BE |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor（24A，100V，0.080Ω）(N溝道增強(qiáng)型MOS場(chǎng)效應(yīng)管（漏電流24A, 漏源電壓100V，導(dǎo)通電阻0.080Ω）) |
| 中文描述： | 24 A, 100 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大?。?/td> | 73K |
| 代理商： | NDP610BE |
Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Type
Min
Typ
Max
Units
SWITCHING CHARACTERISTICS
(Note 2)
t
D(ON)
Turn - On Delay Time
t
r
t
D(OFF)
Turn - Off Delay Time
t
f
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS
I
S
Maximum Continuos Drain-Source Diode Forward Current
V
DD
= 50 V, I
D
= 26 A,
V
GS
= 10 V, R
GEN
= 7.5
ALL
ALL
11
72
20
120
nS
nS
Turn - On Rise Time
ALL
ALL
40
52
65
85
nS
nS
Turn - Off Fall Time
V
DS
= 80 V,
I
D
= 26 A, V
GS
= 10V
ALL
ALL
ALL
47
8
22
65
nC
nC
nC
NDP610A
NDP610AE
NDB610A
NDB610AE
NDP610B
NDP610BE
NDB610B
NDB610BE
NDP610A
NDP610AE
NDB610A
NDB610AE
NDP610B
NDP610BE
NDB610B
NDB610BE
ALL
26
A
24
A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
104
A
96
A
V
(Note 2)
Drain-Source Diode Forward
Voltage
V
GS
= 0 V,
I
S
= 13 A
0.88
0.83
108
1.3
1.2
155
V
V
ns
T
J
= 125°C
t
rr
I
rr
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
Reverse Recovery Time
V
GS
= 0 V, I
= 26 A,
dI
S
/dt = 100 A/μs
ALL
Reverse Recovery Current
ALL
7.4
11
A
R
θ
JC
R
θ
JA
Notes:
1. NDP610A/610B and NDB610A/610B are not rated for operation in avalanche mode.
2. Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%.
ALL
1.5
°
C/W
Thermal Resistance, Junction-to-Ambient
ALL
62.5
°
C/W
NDP610.SAM
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NDB610A | N-Channel Enhancement Mode Field Effect Transistor |
| NDB610AE | N-Channel Enhancement Mode Field Effect Transistor |
| NDB610B | N-Channel Enhancement Mode Field Effect Transistor |
| NDB610BE | N-Channel Enhancement Mode Field Effect Transistor |
| NDP610AE | N-Channel Enhancement Mode Field Effect Transistor |
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| NDP66 | 制造商:Pentair Technical Products / Hoffman 功能描述:Nstar Door Perf 600x600 Black, 21.85x19.41x0.00, Steel |
| NDP7050 | 功能描述:MOSFET N-Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDP7050_Q | 功能描述:MOSFET N-Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDP7050L | 功能描述:MOSFET N-Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDP7050L_Q | 功能描述:MOSFET N-Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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