參數(shù)資料
型號： NDB708A
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： N-Channel Enhancement Mode Field Effect Transistor
中文描述： 60 A, 80 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
文件頁數(shù)： 4/6頁
文件大小： 74K
代理商： NDB708A
NDP708.SAM
0
1
2
3
4
5
0
20
40
60
80
100
120
V , DRAIN-SOURCE VOLTAGE (V)
I
D
10 8.0
7.0
6.0
5.0
V = 20V
GS
4.0
-50
-25
0
25
50
75
100
125
150
175
0.4
0.8
1.2
1.6
2
2.4
T , JUNCTION TEMPERATURE (°C)
D
V = 10V
I = 30A
R
D
-50
-25
0
25
50
75
100
125
150
175
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
T , JUNCTION TEMPERATURE (°C)
G
I = 250μA
V = V
GS
V
t
0
20
40
I , DRAIN CURRENT (A)
60
80
100
120
0.6
0.8
1
1.2
1.4
1.6
1.8
2
D
R
D
6.0
20
8.0
10
7.0
V = 5V
0
20
40
60
80
100
0.6
0.8
1
1.2
1.4
1.6
1.8
2
I , DRAIN CURRENT (A)
D
TJ
25°C
-55°C
V = 10V
R
D
Typical Electrical Characteristics
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Gate Voltage and Drain Current.
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation with
Drain Current and Temperature.
Figure 5. Transfer Characteristics.
Figure 6. Gate Threshold Variation
with Temperature.
2
3
4
5
6
7
0
10
20
30
40
50
60
V , GATE TO SOURCE VOLTAGE (V)
I
D
25
125
V = 10V
J
相關(guān)PDF資料
PDF描述
NDB708AE N-Channel Enhancement Mode Field Effect Transistor
NDB708B N-Channel Enhancement Mode Field Effect Transistor
NDB708BE N-Channel Enhancement Mode Field Effect Transistor
NDS0605 P-Channel Enhancement Mode Field Effect Transistor（-0.18A，-60V，5Ω）(P溝道增強(qiáng)型MOS場效應(yīng)管（漏電流-0.18A, 漏源電壓-60V，導(dǎo)通電阻5Ω）)
NDS331 N-Channel Logic Level Enhancement Mode Field Effect Transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NDB708AE 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor
NDB708B 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor
NDB708BE 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor
NDB710A 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDB710AE 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor
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