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參數(shù)資料
| 型號： | NDB7061L |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| 中文描述： | 60 A, 60 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 359K |
| 代理商： | NDB7061L |
NDP7061L Rev.C1
Typical Electrical Characteristics
(continued)
0
10
20
30
40
50
60
0
20
40
60
80
I , DRAIN CURRENT (A)
g
25°C
F
125°C
TJ
V =10V
DS
Figure 13. Transconductance Variation with Drain
Current and Temperature.
0.1
0.2
0.5
1
5
10
30
60
100
0.5
2
5
10
20
50
100
300
V , DRAIN-SOURCE VOLTAGE (V))
I
D
10μs
100μs
1ms
10ms
100ms
DC
R Lmt
DSON
V = 10V
SINGLE PULSE
R =1.15 C/W
T = 25°C
Figure 14. Maximum Safe Operating Area
.
0.01
0.05
0.1
0.5
1
5
10
50
100
500
1000
0.01
0.02
0.03
0.05
0.1
0.2
0.3
0.5
1
t ,TIME (ms)
T
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
r
Duty Cycle, D =t /t
2
R (t) =r(t) * R
R = 1.15 °C/W
JC
T - T = P * R JC
P(pk)
t
1
t
2
Figure 15. Transient Thermal Response Curve
.
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| NDP7061 | N-Channel Enhancement Mode Field Effect Transistor |
| NDB7061 | N-Channel Enhancement Mode Field Effect Transistor |
| NDP708A | N-Channel Enhancement Mode Field Effect Transistor |
| NDP708AE | N-Channel Enhancement Mode Field Effect Transistor |
| NDP708B | N-Channel Enhancement Mode Field Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NDB708A | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDB708AE | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| NDB708B | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| NDB708BE | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| NDB710A | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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