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參數(shù)資料
| 型號： | NDB7061L |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| 中文描述： | 60 A, 60 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 文件頁數(shù)： | 4/12頁 |
| 文件大?。?/td> | 359K |
| 代理商： | NDB7061L |
NDP7061L Rev.C1
Typical Electrical Characteristics
0
1
2
3
4
5
0
20
40
60
80
100
V , DRAIN-SOURCE VOLTAGE (V)
I
D
V = 10V
3.0
2.5
3.5
4.0
5.0
6.0
4.5
Figure 1. On-Region Characteristics
.
-50
-25
0
25
50
75
100
125
150
175
0.25
0.5
0.75
1
1.25
1.5
1.75
2
2.25
T , JUNCTION TEMPERATURE (°C)
D
V = 10V
I = 30A
R
D
Figure 3. On-Resistance Variation
with Temperature
.
0
1
2
3
4
0
10
20
30
40
50
60
V , GATE TO SOURCE VOLTAGE (V)
I
D
25°C
125°C
V = 10V
J
Figure 5. Transfer Characteristics
.
0
20
40
60
80
100
0.6
0.8
1
1.2
1.4
1.6
1.8
2
I , DRAIN CURRENT (A)
D
R
D
V =3.0V
4.5
5.0
3.5
4.0
10
6.0
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage
.
0
20
40
60
80
100
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
I , DRAIN CURRENT (A)
D
V = 5V
J
25°C
-55°C
R
D
Figure 4. On-Resistance Variation
with Drain Current and Temperature
.
-50
-25
0
25
50
75
100
125
150
175
0.2
0.4
0.6
0.8
1
1.2
1.4
T , JUNCTION TEMPERATURE (°C)
G
V
G
I = 250μA
V = V
GS
Figure 6. Gate Threshold Variation
with Temperature
.
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| NDP7061 | N-Channel Enhancement Mode Field Effect Transistor |
| NDB7061 | N-Channel Enhancement Mode Field Effect Transistor |
| NDP708A | N-Channel Enhancement Mode Field Effect Transistor |
| NDP708AE | N-Channel Enhancement Mode Field Effect Transistor |
| NDP708B | N-Channel Enhancement Mode Field Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NDB708A | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDB708AE | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| NDB708B | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| NDB708BE | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| NDB710A | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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