參數(shù)資料
型號： NDB7052
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： N-Channel Enhancement Mode Field Effect Transistor
中文描述： 75 A, 50 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
文件頁數(shù)： 2/6頁
文件大?。?/td> 57K
代理商： NDB7052
Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE AVALANCHE RATINGS
(Note)
W
DSS
I
AR
OFF CHARACTERISTICS
Single Pulse Drain-Source Avalanche Energy
V
DD
= 25 V, I
D
= 75 A
550
mJ
Maximum Drain-Source Avalanche Current
75
A
BV
DSS
BV
DSS
/
T
J
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 μA
I
D
= 250 μA, Referenced to 25
o
C
50
V
Breakdown Voltage Temp. Coefficient
57
mV/
o
C
Zero Gate Voltage Drain Current
V
DS
= 40 V, V
GS
= 0 V
10
μA
T
J
= 125°C
1
mA
I
GSSF
I
GSSR
ON CHARACTERISTICS
(Note)
Gate - Body Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
100
nA
Gate - Body Leakage, Reverse
-100
nA
V
GS(th)
/
T
J
V
GS(th)
Gate Threshold VoltageTemp. Coefficient
I
D
= 250 μA, Referenced to 25
o
C
-5.2
mV/
o
C
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 μA
2
2.2
3
V
T
J
= 125°C
1.4
1.55
2.4
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= 10 V, I
D
= 37.5 A
0.008
0.01
T
J
= 125°C
0.011
0.018
I
D(on)
g
FS
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
(Note)
On-State Drain Current
V
GS
= 10 V, V
DS
= 10 V
V
DS
= 10 V, I
D
= 37.5 A
60
A
Forward Transconductance
52
S
V
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
3400
pF
1300
pF
460
pF
t
D(on)
Turn - On Delay Time
V
DD
= 30 V, I
D
= 75 A,
V
GS
= 10 V, R
GEN
= 5
15
30
nS
t
r
t
D(off)
Turn - On Rise Time
147
250
nS
Turn - Off Delay Time
85
150
nS
t
f
Q
g
Q
gs
Q
gd
DRAIN-SOURCE DIODE CHARACTERISTICS
Turn - Off Fall Time
165
300
nS
Total Gate Charge
V
= 24 V,
I
D
= 37.5 A, V
GS
= 10 V
117
160
nC
Gate-Source Charge
12
nC
Gate-Drain Charge
46
nC
I
S
I
SM
V
SD
t
rr
I
rr
Note: Pulse Test: Pulse Width < 300 μs, Duty Cycle < 2.0%.
Maximum Continuos Drain-Source Diode Forward Current
75
A
Maximum Pulsed Drain-Source Diode Forward Current
225
A
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 13 A
(Note)
V
GS
= 0 V, I
F
= 37.5 A,
dI
F
/dt = 100 A/μs
0.9
1.3
V
Reverse Recovery Time
75
150
ns
Reverse Recovery Current
4
10
A
NDP7052 Rev.B1
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