參數(shù)資料
型號： NDB7051L
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： N-Channel Logic Level Enhancement Mode Field Effect Transistor
中文描述： 67 A, 50 V, 0.0145 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
文件頁數(shù)： 2/12頁
文件大?。?/td> 360K
代理商： NDB7051L
Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE AVALANCHE RATINGS
(Note 1)
W
DSS
Single Pulse Drain-Source Avalanche
Energy
V
DD
= 25 V, I
D
= 67 A
430
mJ
I
AR
OFF CHARACTERISTICS
Maximum Drain-Source Avalanche Current
67
A
BV
DSS
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 μA
V
DS
= 40 V, V
GS
= 0 V
50
V
Zero Gate Voltage Drain Current
10
μA
T
J
= 125°C
1
mA
I
GSSF
I
GSSR
ON CHARACTERISTICS
(Note 1)
Gate - Body Leakage, Forward
V
GS
= 16 V, V
DS
= 0 V
V
GS
= -16 V, V
DS
= 0 V
100
nA
Gate - Body Leakage, Reverse
100
nA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 μA
1
1.24
2
V
T
J
= 125°C
0.65
0.84
1.5
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= 5 V, I
D
= 34 A
0.013
0.0145
T
J
= 125°C
0.018
0.026
V
GS
= 10 V, I
D
= 34 A
V
GS
= 5 V, V
DS
= 10 V
V
DS
= 5 V, I
D
= 34 A
0.01
0.0115
I
D(on)
g
FS
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
(Note 1)
On-State Drain Current
60
A
Forward Transconductance
50
S
V
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
2700
pF
850
pF
300
pF
t
D(on)
Turn - On Delay Time
V
DD
= 25 V, I
D
= 34 A,
V
GS
= 5 V, R
GEN
= 10
R
GS
= 10
17
30
nS
t
r
t
D(off)
Turn - On Rise Time
182
300
nS
Turn - Off Delay Time
82
150
nS
t
f
Q
g
Q
gs
Q
gd
Turn - Off Fall Time
157
250
nS
Total Gate Charge
V
= 12 V
I
D
= 67 A , V
GS
= 5 V
56
80
nC
Gate-Source Charge
9
nC
Gate-Drain Charge
32
nC
NDP7051L Rev.D/NDB7051L Rev.E
相關(guān)PDF資料
PDF描述
NDP7051 N-Channel Enhancement Mode Field Effect Transistor
NDB7051 N-Channel Enhancement Mode Field Effect Transistor
NDP7052L N-Channel Logic Level Enhancement Mode Field Effect Transistor
NDB7052L N-Channel Logic Level Enhancement Mode Field Effect Transistor
NDP7052 N-Channel Enhancement Mode Field Effect Transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NDB7052 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor
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NDB7060 功能描述:MOSFET N-Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDB7060L 功能描述:MOSFET N-CH 60V 75A D2PAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
NDB7061 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor
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