參數資料
型號: NCN6010D
廠商: ON SEMICONDUCTOR
英文描述: SIM Card Supply and Level Shifter
中文描述: SIM卡供應和電平轉換器
文件頁數: 15/16頁
文件大小: 173K
代理商: NCN6010D
NCN6010
http://onsemi.com
15
The layout of the PCB is a key parameter to avoid the
voltage spikes that could pollute the rest of the system.
Figure 16 represents a typical printed circuit lay out, based
on the schematic diagram given in Figure 14, highlighting
the large ground plane used in this engineering tool.
Obviously, a GSM application will use much less area, but
cares must be observed to locate the capacitors as close as
possible to the integrated circuit associated pins.
Capacitors C1, C2, C3, C4 and C5 are ceramic, X7R, 10 V,
surface mount.
Figure 15. Engineering Test Board Silk Layer
Figure 16. Engineering Test Board Top Layer
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相關代理商/技術參數
參數描述
NCN6010DTB 功能描述:轉換 - 電壓電平 2.7V Sim Card RoHS:否 制造商:Micrel 類型:CML/LVDS/LVPECL to LVCMOS/LVTTL 傳播延遲時間:1.9 ns 電源電流:14 mA 電源電壓-最大:3.6 V 電源電壓-最小:3 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:MLF-8
NCN6010DTBG 功能描述:轉換 - 電壓電平 2.7V Sim Card Power Supply RoHS:否 制造商:Micrel 類型:CML/LVDS/LVPECL to LVCMOS/LVTTL 傳播延遲時間:1.9 ns 電源電流:14 mA 電源電壓-最大:3.6 V 電源電壓-最小:3 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:MLF-8
NCN6010DTBR2 功能描述:轉換 - 電壓電平 2.7V Sim Card RoHS:否 制造商:Micrel 類型:CML/LVDS/LVPECL to LVCMOS/LVTTL 傳播延遲時間:1.9 ns 電源電流:14 mA 電源電壓-最大:3.6 V 電源電壓-最小:3 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:MLF-8
NCN6010DTBR2G 功能描述:轉換 - 電壓電平 2.7V Sim Card Power Supply RoHS:否 制造商:Micrel 類型:CML/LVDS/LVPECL to LVCMOS/LVTTL 傳播延遲時間:1.9 ns 電源電流:14 mA 電源電壓-最大:3.6 V 電源電壓-最小:3 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:MLF-8
NCN6011/D 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Low Power Level Shifter