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參數(shù)資料
| 型號(hào)： | MX28F1000PQI-90 |
| 廠商： | MACRONIX INTERNATIONAL CO LTD |
| 元件分類： | DRAM |
| 英文描述： | 1M-BIT [128K x 8] CMOS FLASH MEMORY |
| 中文描述： | 128K X 8 FLASH 12V PROM, 90 ns, PQCC32 |
| 封裝： | PLASTIC, MO-052, LCC-32 |
| 文件頁(yè)數(shù)： | 11/33頁(yè) |
| 文件大小： | 127K |
| 代理商： | MX28F1000PQI-90 |
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11
P/N: PM0340
REV. 1.6, JAN. 19, 1999
MX28F1000P
ABSOLUTE MAXIMUM RATINGS
RATING
VALUE
Ambient Operating Temperature
-40
o
C to 85
o
C
Storage Temperature
-65
o
C to 125
o
C
Applied Input Voltage
-0.5V to 7.0V
Applied Output Voltage
-0.5V to 7.0V
VCC to Ground Potential
-0.5V to 7.0V
A9 & VPP
-0.5V to 13.5V
NOTICE:
Stresses greater than those listed under ABSOLUTE MAXI-
MUM RATINGS may cause permanent damage to the de-
vice. This is stress rating only and functional operational
sections of this specification is not implied. Exposure to ab-
solute maximum rating conditions for extended period may
affect reliability.
NOTICE:
Specifications contained within the following tables are sub-
ject to change.
CAPACITANCE
TA = 25
o
C, f = 1.0 MHz
SYMBOL
PARAMETER
MIN.
TYP
MAX.
UNIT
CONDITIONS
CIN
Input Capacitance
14
pF
VIN = 0V
COUT
Output Capacitance
16
pF
VOUT = 0V
READ OPERATION
DC CHARACTERISTICS
SYMBOL
ILI
PARAMETER
Input Leakage Current
MIN.
TYP
MAX.
10
UNIT
uA
CONDITIONS
VIN = GND to VCC
ILO
Output Leakage Current
10
uA
VOUT = GND to VCC
IPP1
VPP Current
1
100
uA
VPP = 5.5V
ISB1
Standby VCC current
1
mA
CE = VIH
ISB2
1
100
uA
CE = VCC + 0.3V
ICC1
Operating VCC current
30(NOTE4) mA
IOUT = 0mA, f=1MHz
ICC2
50
mA
IOUT = 0mA, f=11MHz
VIL
Input Low Voltage
-0.3
(NOTE 1)
0.8
V
VIH
Input High Voltage
2.4
VCC + 0.3
V
VOL
Output Low Voltage
0.45
V
IOL = 2.1mA
VOH
Output High Voltage
2.4
V
IOH = -400uA
NOTES:
1. VIL min. = -1.0V for pulse width < 50 ns.
VIL min. = -2.0V for pulse width < 20 ns.
2. VIH max. = VCC + 1.5V for pulse width < 20 ns
If VIH is over the specified maximum value, read operation
cannot be guaranteed.
3. Test condition:
TA =-40
°
C to 85
°
C, Vcc = 5V
±
10%, Vpp = GND to Vcc, CL
= 100pF(for MX28F1000P-90/12)
TA = -40
°
C to 85
°
C, Vcc = 5V
±
10%, Vpp = GND to Vcc, CL
= 35pF(for MX28F1000P-70)
4.ICC1=35mA for TA=-40
°
C to 85
°
C
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| MX28F1000PRC-12C4 | 1M-BIT [128K x 8] CMOS FLASH MEMORY |
| MX28F1000PRC-70C4 | 1M-BIT [128K x 8] CMOS FLASH MEMORY |
| MX28F1000PRC-90C4 | 1M-BIT [128K x 8] CMOS FLASH MEMORY |
| MX28F1000PRI-12 | 1M-BIT [128K x 8] CMOS FLASH MEMORY |
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| MX28F1000PRC-12C4 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:1M-BIT [128K x 8] CMOS FLASH MEMORY |
| MX28F1000PRC-70C4 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:1M-BIT [128K x 8] CMOS FLASH MEMORY |
| MX28F1000PRC-90C4 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:1M-BIT [128K x 8] CMOS FLASH MEMORY |
| MX28F1000PRI-12 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:1M-BIT [128K x 8] CMOS FLASH MEMORY |
| MX28F1000PRI-70 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:1M-BIT [128K x 8] CMOS FLASH MEMORY |
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