參數(shù)資料
型號(hào): MURD320T4
廠商: MOTOROLA INC
元件分類: 整流器
英文描述: 3 A, 200 V, SILICON, RECTIFIER DIODE
文件頁數(shù): 2/4頁
文件大?。?/td> 85K
代理商: MURD320T4
MURD320
2
Rectifier Device Data
Figure 1. Typical Forward Voltage
vF, INSTANTANEOUS VOLTAGE (VOLTS)
0
0.6
0.2
0.8
30
0.1
0.3
0.2
2.0
1.0
100
20
7.0
3.0
0.5
5.0
50
,INST
ANT
ANEOUS
FOR
W
ARD
CURRENT
(AMPS)
F
1.4
VR, REVERSE VOLTAGE (VOLTS)
060
40
100
120
40
80
0.008
0.004
0.002
0.8
0.4
0.2
20
4.0
2.0
8.0
TJ = 175°C
I R
20
80
200
Figure 2. Typical Reverse Current*
TC, CASE TEMPERATURE (°C)
100
1.0
2.0
3.0
4.0
5.0
I F(A
V)
0
6.0
7.0
8.0
110
120
130
140
150
160
170
180
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
0
3.0
2.0
0
2.0
1.0
3.0
5.0
4.0
14
7.0
6.0
P
1.0
10
Figure 3. Average Power Dissipation
Figure 4. Current Derating, Case
020
1.0
1.5
2.5
3.5
4.0
0
40
60
80
100
TA, AMBIENT TEMPERATURE (°C)
I F(A
V)
Figure 5. Current Derating, Ambient
0.4
0.7
10
70
1.0
1.2
100
°C
TJ = 25°C
175
°C
160
180
140
0.08
0.04
0.02
,REVERSE
CURRENT
(
A)m
100
°C
25
°C
6.0
5.0
4.0
9.0
8.0
7.0
9.0
8.0
* The curves shown are typical for the highest voltage device in the
voltage grouping. Typical reverse current for lower voltage selections
can be estimated from these curves if VR is sufficiently below rated
VR.
RATED VOLTAGE APPLIED
RqJC = 6°C/W
,A
VERAGE
FOR
W
ARD
CURRENT
(AMPS)
SINE WAVE
OR
SQUARE WAVE
dc
,A
VERAGE
FOR
W
ARD
CURRENT
(AMPS)
TJ = 175°C
i
150
°C
11
10
13
12
,A
VERAGE
POWER
DISSIP
A
TION
(W
A
TTS)
F(A
V)
TJ = 175°C
IPK/IAV = 20
SINE WAVE
SQUARE WAVE
dc
10
5.0
120
140
160
180 200
0.5
2.0
3.0
SINE WAVE
OR
SQUARE WAVE
SURFACE MOUNTED ON
MIN. PAD SIZE RECOMMENDED
RATED VOLTAGE APPLIED
RqJA = 80°C/W
dc
TJ = 175°C
150
°C
相關(guān)PDF資料
PDF描述
MURD620CTTRPBF 6 A, 200 V, SILICON, RECTIFIER DIODE
MURD620CTPBF 6 A, 200 V, SILICON, RECTIFIER DIODE
MURD620CTTRLPBF 6 A, 200 V, SILICON, RECTIFIER DIODE
MURD620CTTRRPBF 3 A, 200 V, SILICON, RECTIFIER DIODE
MURD620CTTRPBF 3 A, 200 V, SILICON, RECTIFIER DIODE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MURD320T4G 功能描述:整流器 200V 3A Ultrafast RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
MURD320T4G 制造商:ON Semiconductor 功能描述:Ultra Fast Recovery Power Rectifier
MURD330 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:SWITCHMODE Power Rectifier
MURD330T4 功能描述:整流器 300V 3A Ultrafast RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
MURD330T4G 功能描述:整流器 300V 3A Ultrafast RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel