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參數(shù)資料
| 型號(hào)： | MTD4N20E |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 4.0 AMPERES 200 VOLTS RDS(on) = 1.2 OHM |
| 中文描述： | 4 A, 200 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁(yè)數(shù)： | 3/10頁(yè) |
| 文件大?。?/td> | 268K |
| 代理商： | MTD4N20E |
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
R
(
R
ID
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
TJ, JUNCTION TEMPERATURE (
°
C)
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
ID
ID
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On–Resistance versus Drain Current
and Temperature
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
1
100
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–To–Source Leakage
Current versus Voltage
VDS
≥
10 V
100
°
C
25
°
C
VGS = 10 V
– 55
°
C
25
°
C
– 50
– 25
0
25
50
75
100
125
150
VGS = 0 V
TJ = 125
°
C
TJ = 100
°
C
TJ = 25
°
C
VGS = 10 V
ID = 4 A
10
VGS = 10 V
8 V
TJ = 25
°
C
100
°
C
15 V
8
6 V
7 V
9 V
TJ = – 55
°
C
2.5
2.0
1.5
1.0
0.5
0
5 V
7
6
5
4
3
2
1
0
14
12
10
8
6
4
2
0
8
7
6
5
4
3
2
1
0
9
8
7
6
5
4
3
2
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
7
6
5
4
2
1
0
8
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
7
6
5
4
3
2
1
0
8
VGS = 10 V
25
°
C
200
150
100
50
0
250
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
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