參數(shù)資料
型號(hào)： MTD2N40E
廠商： MOTOROLA INC
元件分類： JFETs
英文描述： TMOS POWER FET 2.0 AMPERES 400 VOLTS RDS(on) = 3.5 OHM
中文描述： 2 A, 400 V, 3.5 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁(yè)數(shù)： 2/10頁(yè)
文件大?。?/td> 268K
代理商： MTD2N40E
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250
μ
Adc)
Temperature Coefficient (Positive)
V(BR)DSS
400
—
—
451
—
—
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(VDS = 400 Vdc, VGS = 0 Vdc)
(VDS = 400 Vdc, VGS = 0 Vdc, TJ = 125
°
C)
Gate–Body Leakage Current (VGS =
±
20 Vdc, VDS = 0)
IDSS
—
—
—
—
10
100
μ
Adc
IGSS
—
—
100
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mA)
Temperature Coefficient (Negative)
VGS(th)
2.0
—
3.2
7.0
4.0
—
Vdc
mV/
°
C
Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 1.0 Adc)
Drain–Source On–Voltage (VGS = 10 Vdc)
(ID = 2.0 Adc)
(ID = 1.0 Adc, TJ = 125
°
C)
RDS(on)
VDS(on)
—
3.1
3.5
Ohm
—
—
7.3
—
8.4
7.4
Vdc
Forward Transconductance (VDS = 15 Vdc, ID = 1.0 Adc)
gFS
0.5
1.0
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
f = 1.0 MHz)
Ciss
Coss
Crss
—
229
320
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
—
34
40
Reverse Transfer Capacitance
—
7.3
10
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
RG = 9.1
)
td(on)
tr
td(off)
tf
—
8.0
16
ns
Rise Time
(VDD = 200 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc,
—
8.4
14
Turn–Off Delay Time
—
12
26
Fall Time
—
11
20
Gate Charge
VGS = 10 Vdc)
QT
Q1
Q2
Q3
—
8.6
12
nC
(VDS = 320 Vdc, ID = 2.0 Adc,
—
2.6
—
—
3.2
—
—
5.0
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (1)
(IS = 2.0 Adc, VGS = 0 Vdc)
(IS = 2.0 Adc, VGS = 0 Vdc, TJ = 125
°
C)
VSD
—
—
0.88
0.76
1.2
—
Vdc
Reverse Recovery Time
dIS/dt = 100 A/
μ
s)
trr
ta
—
156
—
ns
(IS = 2.0 Adc, VGS = 0 Vdc,
—
99
—
tb
—
57
—
Reverse Recovery Stored Charge
QRR
—
0.89
—
μ
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25
″
from package to center of die)
LD
—
4.5
—
nH
Internal Source Inductance
(Measured from the source lead 0.25
″
from package to source bond pad)
LS
—
7.5
—
nH
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(2) Switching characteristics are independent of operating junction temperature.
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