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參數(shù)資料
| 型號： | MTB75N03HDL |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET LOGIC LEVEL 75 AMPERES 25 VOLTS |
| 中文描述： | 75 A, 30 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 12/12頁 |
| 文件大?。?/td> | 304K |
| 代理商： | MTB75N03HDL |
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Motorola TMOS Power MOSFET Transistor Device Data
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MTB8N50E | TMOS POWER FET 8.0 AMPERES 500 VOLTS |
| MTD1P50E | TMOS POWER FET 1.0 AMPERES 500 VOLTS 15 OHM |
| MTD2N40E | TMOS POWER FET 2.0 AMPERES 400 VOLTS RDS(on) = 3.5 OHM |
| MTD2N50E | TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 3.6 OHM |
| MTD3N25E | TMOS POWER FET 3 AMPERES 250 VOLTS RDS(on) = 1.4 OHM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTB75N05HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 75 AMPERES 50 VOLTS |
| MTB75N05HDT4 | 功能描述:MOSFET N-CH 50V 75A D2PAK-3 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| MTB75N06 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 75 AMPERES 60 VOLTS |
| MTB75N06HD | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 75A 3-Pin(2+Tab) D2PAK Rail |
| MTB7671 | 制造商:Megger 功能描述:METER TEST BOX |
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