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參數(shù)資料
| 型號： | MTB50P03HDL |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET LOGIC LEVEL 50 AMPERES 30 VOLTS |
| 中文描述： | 50 A, 30 V, 0.03 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 182K |
| 代理商： | MTB50P03HDL |
5
Motorola TMOS Power MOSFET Transistor Device Data
QT, TOTAL GATE CHARGE (nC)
RG, GATE RESISTANCE (Ohms)
t
V
V
Figure 8. Gate–To–Source and Drain–To–Source
Voltage versus Total Charge
1
10
10
100
1000
VDD = 30 V
VGS = 10 V
ID = 50 A
TJ = 25
°
C
tf
td(on)
td(off)
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
0
10
30
50
60
80
20
40
3
6
2
0
1
4
5
30
25
20
15
5
10
0
QT
Q2
VGS
ID = 50 A
TJ = 25
°
C
VDS
Q3
Q1
70
tr
DRAIN–TO–SOURCE DIODE CHARACTERISTICS
The switching characteristics of a MOSFET body diode
are very important in systems using it as a freewheeling or
commutating diode. Of particular interest are the reverse re-
covery characteristics which play a major role in determining
switching losses, radiated noise, EMI and RFI.
System switching losses are largely due to the nature of
the body diode itself. The body diode is a minority carrier de-
vice, therefore it has a finite reverse recovery time, trr, due to
the storage of minority carrier charge, QRR, as shown in the
typical reverse recovery wave form of Figure 12. It is this
stored charge that, when cleared from the diode, passes
through a potential and defines an energy loss. Obviously,
repeatedly forcing the diode through reverse recovery further
increases switching losses. Therefore, one would like a
diode with short trr and low QRR specifications to minimize
these losses.
The abruptness of diode reverse recovery effects the
amount of radiated noise, voltage spikes, and current ring-
ing. The mechanisms at work are finite irremovable circuit
parasitic inductances and capacitances acted upon by high
di/dts. The diode’s negative di/dt during ta is directly con-
trolled by the device clearing the stored charge. However,
the positive di/dt during tb is an uncontrollable diode charac-
teristic and is usually the culprit that induces current ringing.
Therefore, when comparing diodes, the ratio of tb/ta serves
as a good indicator of recovery abruptness and thus gives a
comparative estimate of probable noise generated. A ratio of
1 is considered ideal and values less than 0.5 are considered
snappy.
Compared to Motorola standard cell density low voltage
MOSFETs, high cell density MOSFET diodes are faster
(shorter trr), have less stored charge and a softer reverse re-
covery characteristic. The softness advantage of the high
cell density diode means they can be forced through reverse
recovery at a higher di/dt than a standard cell MOSFET
diode without increasing the current ringing or the noise gen-
erated. In addition, power dissipation incurred from switching
the diode will be less due to the shorter recovery time and
lower switching losses.
I
VSD, SOURCE–TO–DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus Current
0
10
30
50
40
20
0.4
0.6
0.8
1.0
1.2
1.4
VGS = 0 V
TJ = 25
°
C
1.6
1.8
2.0
2.2
2.4
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| MTB75N03HDL | TMOS POWER FET LOGIC LEVEL 75 AMPERES 25 VOLTS |
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| MTB50P03HDLG | 功能描述:MOSFET PFET 30V 50A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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| MTB50P03HDLT4G | 功能描述:MOSFET PFET D2PAK 30V 50A 25mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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