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參數(shù)資料
| 型號(hào)： | MTB15N06VT4 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 15 A, 60 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 418B-02, D2PAK-3 |
| 文件頁(yè)數(shù)： | 6/11頁(yè) |
| 文件大?。?/td> | 274K |
| 代理商： | MTB15N06VT4 |
MTB15N06V
http://onsemi.com
4
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(NORMALIZED)
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
()
ID, DRAIN CURRENT (AMPS)
Figure 3. OnResistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. OnResistance versus Drain Current
and Gate Voltage
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 6. DrainToSource Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
TJ = 25°C
VGS = 10 V
9 V
8 V
7 V
6 V
5 V
30
25
20
15
10
5
0
7
6
5
4
3
2
1
0
30
25
20
15
10
5
0
10
8
6
4
2
VDS ≥ 10 V
TJ = 55°C
100°C
25°C
VGS = 10 V
0.2
10
5
0
0.14
0.08
0.02
15
20
25
30
TJ = 100°C
25°C
55°C
TJ = 25°C
0.13
0.11
0.09
0.07
0.05
10
5
0
15
202530
VGS = 10 V
15 V
VGS = 10 V
ID = 7.5 A
2
1.6
1.2
0.8
0.4
50
25
0
25
50
75
100
125
150
VGS = 0 V
TJ = 125°C
100
10
0
1020
30405060
175
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