- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄379326 > MRF8372R2 (MOTOROLA INC) Half pitch, Ribbon cable IDC connection; HRS No: 572-0628-1 00; No. of Positions: 100; Connector Type: Wire; Contact Gender: Female; Contact Spacing (mm): 1.27; Terminal Pitch (mm): 2.54; Termination Style: IDC; Current Rating(Amps)(Max.): 0.5; Contact Mating Area Plating: Gold; Operating Temperature Range (degrees C): -55 to 85; General Description: Housing; Cable connector with lock PDF資料下載
參數(shù)資料
| 型號(hào)： | MRF8372R2 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Half pitch, Ribbon cable IDC connection; HRS No: 572-0628-1 00; No. of Positions: 100; Connector Type: Wire; Contact Gender: Female; Contact Spacing (mm): 1.27; Terminal Pitch (mm): 2.54; Termination Style: IDC; Current Rating(Amps)(Max.): 0.5; Contact Mating Area Plating: Gold; Operating Temperature Range (degrees C): -55 to 85; General Description: Housing; Cable connector with lock |
| 中文描述： | 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 101K |
| 代理商： | MRF8372R2 |
MRF8372R1, R2
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 5.0 mAdc, IB = 0)
V(BR)CEO
16
—
—
Vdc
Collector–Emitter Breakdown Voltage
(IC = 5.0 mAdc, VBE = 0)
V(BR)CES
36
—
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
V(BR)EBO
4.0
—
—
Vdc
Collector Cutoff Current
(VCE = 15 Vdc, VBE = 0, TC = 25
°
C)
ICES
—
—
0.1
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 50 mAdc, VCE = 10 Vdc)
hFE
30
90
200
—
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 15 Vdc, IE = 0, f = 1.0 MHz)
Cob
—
1.8
2.5
pF
FUNCTIONAL TESTS
Common–Emitter Amplifier Power Gain
(VCC = 12.5 Vdc, Pout = 0.75 W, f = 870 MHz)
Gpe
8.0
10
—
dB
Collector Efficiency
(VCC = 12.5 Vdc, Pout = 0.75 W, f = 870 MHz)
η
55
60
—
%
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF8372 | RF LOW POWER TRANSISTOR NPN SILICON |
| MRF848 | RF POWER TRANSISTOR |
| MRF894 | CAP 680PF 250VAC B X1Y2 RAD |
| MRF9745T1 | HIGH FREQUENCY POWER TRANSISTOR LDMOS FET |
| MRF9811T1 | HIGH FREQUENCY GaAs FET TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF837G | 制造商:Microsemi Corporation 功能描述:MRF837G - Bulk |
| MRF837GT | 制造商:Microsemi Corporation 功能描述:MRF837GT - Bulk 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
| MRF837T | 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
| MRF838A | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| MRF839F | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。